2SK2446-L,S
N-channel MOS-FET
F-III Series
100V
0,055
30A
80W
> Features
> Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V
DS
100
V
Drain-Gate-Voltage (R
GS
=20K
)
V
DGR
100
V
Continous Drain Current
I
D
30
A
Pulsed Drain Current
I
D(puls)
120
A
Gate-Source-Voltage
V
GS
20
V
Max. Power Dissipation
P
D
80
W
Operating and Storage Temperature Range
T
ch
150
C
T
stg
-55 ~ +150
C
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V
(BR)DSS
I
D
=1mA
V
GS
=0V
100
V
Gate Threshhold Voltage
V
GS(th)
I
D
=1mA
V
DS=
V
GS
1,0
1,5
2,5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=100V
T
ch
=25C
10
500
A
V
GS
=0V
T
ch
=125C
0,2
1,0
mA
Gate Source Leakage Current
I
GSS
V
GS
=20V
V
DS
=0V
10
100
nA
Drain Source On-State Resistance
R
DS(on)
I
D
=15A
V
GS
=4V
0,04
0,07
I
D
=15A
V
GS
=10V
0,03
0,055
Forward Transconductance
g
fs
I
D
=15A
V
DS
=25V
15
30
S
Input Capacitance
C
iss
V
DS
=25V
2500
3700
pF
Output Capacitance
C
oss
V
GS
=0V
500
750
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
250
380
pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
t
d(on)
V
CC
=30V
20
30
ns
t
r
I
D
=30A
140
210
ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
t
d(off)
V
GS
=10V
500
750
ns
t
f
R
GS
=25
260
390
ns
Diode Forward On-Voltage
V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
0,9
1,5
V
Reverse Recovery Time
t
rr
I
F
=I
DR
V
GS
=0V
130
ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/s T
ch
=25C
1,0
C
-
Thermal Characteristics
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R
th(ch-a)
channel to air
125
C/W
R
th(ch-c)
channel to case
1,56
C/W
N-channel MOS-FET
2SK2446-L,S
100V
0,055
30A
80W
F-III Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
=f(V
DS
); 80s pulse test; T
C
=25C
R
DS(on)
= f(T
ch
); I
D
=15A; V
GS
=10V
I
D
=f(V
GS
); 80s pulse test; V
DS
=25V; T
ch
=25C
I
D
[A]
1
R
DS(ON)
[
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
Typical Transconductance
Gate Threshold Voltage
R
DS(on)
=f(I
D
); 80s pulse test; T
C
=25C
g
fs
=f(I
D
); 80s pulse test; V
DS
=25V; T
ch
=25C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitances
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=30A
I
F
=f(V
SD
); 80s pulse test; V
GS
=0V
C [nF]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Power Dissipation
Safe Operation Area
P
D
=f(Tc)
I
D
=f(V
DS
): D=0,01, Tc=25C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch-c
=f(t) parameter:D=t/T
P
D
[W]
I
D
[A]
T
ch
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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