ChipFind - документация

Электронный компонент: 2MBI150P-140

Скачать:  PDF   ZIP
2MBI 150P-140
2-Pack IGBT
1400V
150A
IGBT MODULE ( P-Series )
n
n
Features
Square SC SOA at 10 x I
C
Simplified Parallel Connection
Narrow Distribution of Characteristics
High Short Circuit Withstand-Capability
n
n
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
n
Outline Drawing
n
n
Maximum Ratings and Characteristics
n
n
Equivalent Circuit
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1400
V
Gate -Emitter Voltage
V
GES
20
V
Continuous T
C
=25C
200
Continuous T
C
=80C
150
Collector
1ms
T
C
=25C
400
Current
1ms
T
C
=80C
300
-I
C
150
1ms
-I
C PULSE
300
Max. Power Dissipation
P
C
1100
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
3.5
Terminals *2
3.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1400V
2.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
400
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=150mA
6.0
8.0
9.0
V
T
j
= 25C V
GE
=15V I
C
=150A
2.7
3.0
T
j
=125C V
GE
=15V I
C
=150A
3.3
Input capacitance
C
ies
V
GE
=0V
15000
Output capacitance
C
oes
V
CE
=10V
2000
pF
Reverse Transfer capacitance
C
res
f=1MHz
1000
t
ON
V
CC
=600V
1.2
t
r
I
C
=150A
0.6
t
OFF
V
GE
=
15V
1.0
t
f
R
G
=5.6
0.3
Diode Forward On-Voltage
V
F
I
F
=150A V
GE
=0V
2.4
3.3
V
Reverse Recovery Time
t
rr
I
F
=150A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.11
Thermal Resistance
R
th(j-c)
Diode
0.24
C/W
R
th(c-f)
With Thermal Compound
0.025
Screw Torque
V
CE(sat)
Collector-Emitter Saturation Voltage
Turn-on Time
Turn-off Time
V
s
I
C
I
C PULSE
A
Nm
2MBI 150P-140
2-Pack IGBT
1400V
150A
0
1
2
3
4
5
6
0
1 0 0
2 0 0
3 0 0
4 0 0
1 0 V
1 1 V
1 2 V
1 5 V
V
G E
= 2 0 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
1
2
3
4
5
6
0
1 0 0
2 0 0
3 0 0
4 0 0
1 0 V
1 1 V
1 2 V
1 5 V
V
G E
= 2 0 V
Collector Current vs. Collector-Emitter Voltage
T
j
= 1 2 5 C
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
0
5
1 0
1 5
2 0
2 5
0
2
4
6
8
1 0
I
C
= 3 0 0 A
I
C
= 1 5 0 A
I
C
= 7 5 A
Collector-Emitter vs. Gate-Emitter Voltage
T
j
= 2 5 C
Collector Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
G E
[V]
0
5
1 0
1 5
2 0
2 5
0
2
4
6
8
1 0
I
C
= 3 0 0 A
I
C
= 1 5 0 A
I
C
= 7 5 A
Collector-Emitter vs. Gate-Emitter Voltage
T
j
= 1 2 5 C
Collector Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
G E
[V]
0
1 0 0
2 0 0
3 0 0
10
1 0 0
1 0 0 0
t
r
t
f
t
off
t
on
Switching Time vs. Collector Current
V
CC
= 6 0 0 V , R
G
=5,6
, V
GE
= 1 5 V , T
j
= 2 5 C
Switching Time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector Current: I
C
(A)
0
1 0 0
2 0 0
3 0 0
10
1 0 0
1 0 0 0
t
r
t
f
t
off
t
on
Switching Time vs. Collector Current
V
CC
= 6 0 0 V , R
G
=5,6
, V
GE
= 1 5 V , T
j
= 1 2 5 C
Switching Time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector Current: I
C
(A)
2MBI 150P-140
2-Pack IGBT
1400V
150A
1
10
1 0 0
10
1 0 0
1 0 0 0
1 0 0 0 0
t
f
t
off
t
r
t
on
Switching Time vs. R
G
V
CC
=600V, I
C
= 1 5 0 A , V
GE
= 1 5 V , T
j
= 2 5 C
Gate Resistance : R
G
[
]
Switching Time : t
on
, t
r
, t
off
, t
f
[nsec]
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
V
C C
= 4 0 0 , 6 0 0 , 8 0 0 V
0
5
1 0
1 5
2 0
2 5
Gate-Emitter Voltage : V
GE
[V]
Collector Current vs. Collector-Emitter Voltage
T
j
= 2 5 C
Collector-Emitter-Voltage : V
GE
[V]
G a t e C h a r g e : Q
g
( n C )
0
1
2
3
4
0
1 0 0
2 0 0
3 0 0
4 0 0
2 5 C
T
j
= 1 2 5 C
F o r w a r d V o l t a g e v s . F o r w a r d C u r r e n t
V
G E
= 0 V
Forward Current : I
F
[A]
F o r w a r d V o l t a g e : V
F
[V]
0
1 0 0
2 0 0
3 0 0
10
1 0 0
1 0 0 0
I
rr
= 2 5 C
t
rr
= 2 5 C
I
rr
= 1 2 5 C
t
rr
= 1 2 5 C
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
Reverse Recovery Current : I
rr
[A]
Reverse Recovery Time : t
rr
[nsec]
Forward Current : I
F
[A]
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
-3
1 0
-2
1 0
-1
I G B T
F W D
Transient Thermal Resistance
Thermal Resistance : R
th(j-c)
[C/W]
Pulse Width : P
W
[sec]
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
1 6 0 0
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
R e v e r s e B i a s e d S a f e O p e r a t i n g A r e a
+ V
G E
= 1 5 V , - V
G E
1 5 V , T
j
1 2 5 C , R
G
4,7
Collector Current : I
C
[A]
Collector-Emitter Voltage : V
C E
[V]
2MBI 150P-140
2-Pack IGBT
1400V
150A
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
0
2 0
4 0
6 0
8 0
Switching Loss vs. Collector Current
V
C C
= 6 0 0 V , R
G
=5,6
, V
G E
= 1 5 V
E
on
1 2 5 C
E
on
2 5 C
E
off
1 2 5 C
E
off
2 5 C
E
rr
1 2 5 C
E
rr
2 5 C
Switching Loss : E
on
, E
off
, E
rr
[mJ/cycle]
Collector Current : I
C
[A]
0
5
10
15
20
25
30
35
0,1
1
10
1 0 0
C
res
C
oes
C
ies
Capacitance vs. Collector-Emitter Voltage
T
j
= 2 5 C
Capacitance: C
ies
, C
oes
, C
res
[nF]
Collector Emitter Voltage : V
CE
[V]
For more information, contact:
Collmer Semiconductor, Inc.
P.O. Box 702708
Dallas, TX 75370
972-233-1589
972-233-0481 Fax
http://www.collmer.com