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Электронный компонент: MC13821

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Freescale Semiconductor, Inc., 2005, 2006. All rights reserved.
Freescale Semiconductor
Advance Information
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Document Number: MC13821/D
Rev. 1.0, 04/2006
MC13821
Package Information
Plastic Package
Case 1345
(QFN12)
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MC13821
821
QFN-12
1
Introduction
The MC13821 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13821 is fabricated using Freescale's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN-12 leadless package.
1.1
Features
RF Input Frequency: 1000 MHz to 2.4 GHz
Gain: 16.4 dB (typ) at 1960 MHz and 15.7 dB
(typ) at 2140 MHz
Output 3rd Order Intercept Point (OIP3): 17.4
dBm (typ) at 1960 MHz and 19.7 dBm (typ) at
2140 MHz
Noise Figure (NF): 1.25 dB (typ) at 1960 MHz
and 1.3 dB (typ) at 2140 MHz
1dB Compression Point (P1dB): -6 dBm (typ) at
1960 MHz and -5 dBm (typ) at 2140 MHz
MC13821
Low Noise Amplifier with Bypass
Switch
Contents:
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Electrical Specifications . . . . . . . . . . . . . . . . 3
3 Application Information . . . . . . . . . . . . . . . . 10
4 Printed Circuit Board . . . . . . . . . . . . . . . . . . 26
5 Scattering Parameters . . . . . . . . . . . . . . . . . 30
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7 Product Documentation . . . . . . . . . . . . . . . . 40
Introduction
MC13821 Advance Information, Rev. 1.0
2
Freescale Semiconductor
Freescale's IP3 Boost Circuitry
Bypass Mode Included for Improved Intercept Point Performance
Total Supply Current:
2.8 mA @ 2.7 Vdc
10 A (typ) in Bypass Mode
Bias Stabilized for Device and Temperature Variations
QFN-12 Leadless Package with Low Parasitics
SiGe Technology Ensures Lowest Possible Noise Figure
Figure 1. Simplified Block Diagram
2
1
3
4
5
6
12
11
10
8
9
7
Gnd
LNA
Out
LNA
In
Gain
Enable
VCC1
MC13821
Rbias
Emit
Gnd
Logic
NC
NC
NC
NC
Electrical Specifications
MC13821 Advance Information, Rev. 1.0
Freescale Semiconductor
3
2
Electrical Specifications
Table 1. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
V
CC
3.3
V
Storage Temperature Range
T
stg
-65 to 150
C
Operating Ambient Temperature Range
T
A
-30 to 85
C
RF Input Power
P
rf
10
dBm
Power Dissipation
P
dis
100
mW
Thermal Resistance, Junction to Case
R
JC
24
C/W
Thermal Resistance, Junction to Ambient, 4 Layer Board
R
JA
90
C/W
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
200 V, Charge Device Model (CDM)
450 V, and
Machine Model (MM)
50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency range
f
RF
1000
2400
MHz
Supply Voltage
V
CC
2.7
2.75
3
V
Logic Voltage
Input High Voltage
Input Low Voltage
1.25
0
-
-
V
CC
0.8
V
Table 3. Electrical Characteristics
(V
CC
= 2.75 V, T
A
= 25C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Insertion Gain
R1=1.2 k
, Freq=1.960 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.960 GHz
R1=2 k
, Freq=2.14 GHz
|S21|
2
15.0
14.5
13.3
13
16.0
15.6
14.3
14.2
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain
1
R1=1.2 k
, Freq=1.960 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.960 GHz
R1=2 k
, Freq=2.14 GHz
MSG, MAG
20.0
19.5
19.0
19.5
21.0
20.5
20.0
19.6
-
-
-
-
dB
Minimum Noise Figure
R1=1.2 k
, Freq=1.960 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.960 GHz
R1=2 k
, Freq=2.14 GHz
NFmin
-
-
-
-
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
dB
Electrical Specifications
MC13821 Advance Information, Rev. 1.0
4
Freescale Semiconductor
Associated Gain at Minimum Noise Figure
R1=1.2 k
, Freq=1.960 GHz
R1=1.2 k
, Freq=2.14 GHz
R1=2 k
, Freq=1.960 GHz
R1=2 k
, Freq=2.14 GHz
Gnf
19.8
19
19.6
19
20.8
19.8
20.6
19.8
-
-
-
-
dB
1
Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
, if K > 1,
, if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(V
CC
= 2.75 V, T
A
= 25C, Rbias = 2 k
, unless otherwise noted.)
Characteristic Symbol
Min
Typ
Max
Unit
1575 MHz (Refer to
Figure 9
)
Frequency
f
-
1575
-
MHz
Active Gain
G
17
18
-
dB
Active Noise Figure
NF
-
1.25
1.45
dB
Active Input Third Order Intercept Point
IIP3
-1.0
0.5
-
dBm
Active Input 1dB Compression Point
P
1dB
-11
-10
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.3
mA
Bypass Gain
G
-6.0
-5.0
-
dB
Bypass Noise Figure
NF
-
4.8
6
dB
Bypass Input Third Order Intercept Point
IIP3
26
27
-
dBm
Bypass Current
-
10
20
A
1960 MHz (Refer to
Figure 10
)
Frequency
f
-
1960
-
MHz
Active Gain
G
16
16.4
-
dB
Active Noise Figure
NF
-
1.25
1.45
dB
Active Input Third Order Intercept Point
IIP3
0
1
-
dBm
Active Input 1dB Compression Point
P
1dB
-7.0
-6
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.3
mA
Bypass Gain
G
-5.0
-4
-
dB
Bypass Noise Figure
NF
-
4.7
6
dB
Bypass Input Third Order Intercept Point
IIP3
23
25
-
dBm
Bypass Current
-
10
20
A
Table 3. Electrical Characteristics (continued)
(V
CC
= 2.75 V, T
A
= 25C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
MAG
S
21
S
12
---------- K
K
2
1
=
MSG
S
21
S
12
----------
=
Electrical Specifications
MC13821 Advance Information, Rev. 1.0
Freescale Semiconductor
5
1960 MHz (R1 = 1.3 k
, R2 = 68
, C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH) (Refer to
Figure 10
)
Frequency
f
1960
MHz
Active Gain
G
10.5
11.5
12.5
dB
Active Noise Figure
NF
-
1.3
1.9
dB
Active Input Third Order Intercept Point
IIP3
-2
0
-
dBm
Active Input 1dB Compression Point
P
1dB
-15
-10
-
dBm
Active Current @ 2.75 V
I
CC
-
4.5
5.5
mA
Bypass Gain
G
-6.5
-3.5
-
dB
Bypass Noise Figure
NF
7.6
dB
Bypass Input Third Order Intercept Point
IIP3
20
21
-
dBm
Bypass Current
-
10
20
A
1960 MHz (R1 = 1.8 k
, R2 = 330
, C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH) (Refer to
Figure 10
)
Frequency
f
1960
MHz
Active Gain
G
14
15
16
dB
Active Noise Figure
NF
-
1.3
1.9
dB
Active Input Third Order Intercept Point
IIP3
-2
0
-
dBm
Active Input 1dB Compression Point
P
1dB
-10
-5
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
5.5
mA
Bypass Gain
G
-6.5
-3.5
-
dB
Bypass Noise Figure
NF
4.7
6
dB
Bypass Input Third Order Intercept Point
IIP3
16
18
-
dBm
Bypass Current
-
10
20
A
2140 MHz (Refer to
Figure 11
)
Frequency
f
-
2140
-
MHz
Active Gain
G
15.3
15.7
-
dB
Active Noise Figure
NF
-
1.3
1.5
dB
Active Input Third Order Intercept Point
IIP3
2.5
3.5
-
dBm
Active Input 1dB Compression Point
P
1dB
-6.0
-5
-
dBm
Active Current @ 2.75 V
I
CC
-
2.8
3.2
mA
Bypass Gain
G
-4.2
-3.2
-
dB
Bypass Noise Figure
NF
-
3.2
3.6
dB
Bypass Input Third Order Intercept Point
IIP3
22.5
24.5
-
dBm
Bypass Current
-
10
20
A
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(V
CC
= 2.75 V, T
A
= 25C, Rbias = 2 k
, unless otherwise noted.)
Characteristic Symbol
Min
Typ
Max
Unit