LP6836P70
P
ACKAGED
M
EDIUM
P
OWER
PHEMT
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
1/22/01
Fax:
(408) 970-9950
Email:
sales@filss.com
FEATURES
23 dBm Output Power at 1-dB Compression at 15 GHz
11.5 dB Power Gain at 15 GHz
50% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25
m x 360
m Schottky barrier gate, defined by electron-beam
photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link high-
performance power amplifiers.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C*
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current**
I
DSS
V
DS
= 2 V; V
GS
= 0 V
80
125
mA
Power at 1-dB Compression
P-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
22
23
dBm
Power Gain at 1-dB Compression
G-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
10.5
12
dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 20 dBm
50
%
Maximum Drain-Source Current
I
MAX
V
DS
= 2 V; V
GS
= 1 V
190
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
70
95
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
1
15
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 2 mA
-0.25
-0.8
-2.0
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= mA
-11
-15
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 2 mA
-12
-16
V
*frequency=15 GHz, unless otherwise noted
**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P702 = 96-105 mA, and LP6836P70-3 = 106-125 mA
LP6836P70
P
ACKAGED
M
EDIUM
P
OWER
PHEMT
Phone:
(408) 988-1845
http://
www.filss.com
Revised:
1/22/01
Fax:
(408) 970-9950
Email:
sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
7
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-4
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3
C
18
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
150
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
1.0
W
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25
C:
P
TOT
= 1.0W (.0036W/
C) x T
HS
where T
HS
= heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
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