www.docs.chipfind.ru
2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
RF1K49211
7A, 12V, 0.020 Ohm, Logic Level, Single
N-Channel LittleFETTM Power MOSFET
The RF1K49211 Single N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It was designed for
use in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low-voltage bus
switches. This product achieves full-rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49211.
Features
7A, 12V
r
DS(ON)
= 0.020
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49211
MS-012AA
RF1K49211
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4921196.
SOURCE(2)
DRAIN(8)
NC(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49211
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
12
V
Drain to Gate Voltage (Rgs = 20K
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
12
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
Continuous (Pulse Width = 1s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
7
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 13)
12
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 12)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 12V,
V
GS
= 0V
T
A
= 25
o
C
-
-
1
A
T
A
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 7A, V
GS
= 5V, (Figures 9, 11)
-
-
0.020
Turn-On Time
t
ON
V
DD
= 6V, I
D
7A,
R
L
= 0.86
, V
GS
=
5V,
R
GS
= 25
-
-
250
ns
Turn-On Delay Time
t
d(ON)
-
50
-
ns
Rise Time
t
r
-
150
-
ns
Turn-Off Delay Time
t
d(OFF)
-
120
-
ns
Fall Time
t
f
-
160
-
ns
Turn-Off Time
t
OFF
-
-
350
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 9.6V,
I
D
7A,
R
L
= 1.37
I
g(REF)
= 1.0mA
(Figure15)
-
60
75
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
35
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2
2.5
nC
Input Capacitance
C
ISS
V
DS
= 12V, V
GS
= 0V,
f = 1MHz
(Figure 14)
-
1850
-
pF
Output Capacitance
C
OSS
-
1600
-
pF
Reverse Transfer Capacitance
C
RSS
-
600
-
pF
Thermal Resistance Junction to Ambient
R
JA
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 7A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 7A, dI
SD
/dt = 100A/
s
-
-
95
ns
RF1K49211
2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DI
SSI
P
A
T
I
O
N
M
U
L
T
I
P
L
I
ER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
4
2
0
25
50
75
100
125
150
6
I
D
,
DRAIN CURRENT
(
A
)
T
A
, AMBIENT TEMPERATURE (
o
C)
8
t
1
, RECTANGULAR PULSE DURATION (s)
0.01
0.1
1
10
10
-3
10
-1
10
0
10
1
10
2
10
3
10
-2
Z
JA
,
N
O
R
M
A
LI
ZE
D
T
H
E
R
MA
L
IM
PE
D
ANCE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
SINGLE PULSE
10
-4
10
-5
0.001
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
50
0.01
1
100
10
0.1
0.1
I
D
, DRAIN
CURRENT
(
A
)
DC
5ms
100ms
1s
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
V
DSS(MAX)
= 12V
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
300
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
100
I
DM
, PEAK CURRENT
(
A
)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
RF1K49211
2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE TO SOURCE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
50
1
I
AS
,
A
V
AL
ANCHE CURRENT
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0.01
0
10
20
30
0
1
2
3
4
5
V
GS
= 3V
40
50
V
GS
= 4V
I
D
, DRAIN
CURRENT
(
A
)
V
GS
= 10V
V
GS
= 5V
V
GS
= 2.5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
0
2
3
4
5
1
0
10
20
30
40
50
150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
I
D(
ON)
, ON-
S
T
A
T
E
DRAIN CURRENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
50
100
150
200
0
3.5
2.5
4
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(
O
N)
,
ON-
S
T
A
T
E
RESIST
ANCE (
m
)
2
4.5
5
I
D
= 3.5A
I
D
= 7.0A
I
D
= 15A
I
D
= 1.75A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
V
DD
= 6V, I
D
= 7A, R
L
= 0.86
0
100
200
250
0
10
20
30
40
50
300
350
SWIT
CHING T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
f
t
r
t
d(OFF)
t
d(ON)
150
50
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORM
AL
IZ
ED ON
RES
I
S
T
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 7A
RF1K49211
2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
NORM
AL
I
Z
ED G
A
T
E
T
HRESHOL
D V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
I
Z
ED DRAI
N T
O
S
O
URCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
3500
3000
1000
0
0
2
4
6
8
10
C, CAP
A
C
IT
ANCE (
p
F
)
2500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
2000
500
1500
12
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
12
9
6
3
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t , TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
5.00
3.75
2.50
1.25
0
R
L
= 1.71
I
G(REF)
= 0.75mA
V
GS
= 5V
V
DS
, DRAI
N T
O
SOURCE V
O
L
T
A
G
E (
V
)
V
GS
,
GA
T
E
T
O
SOURCE V
O
L
T
A
G
E
(
V
)
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49211
PDF 
ZIP