ChipFind - документация

Электронный компонент: QVE00033

Скачать:  PDF   ZIP
3/19/03
PACKAGE DIMENSIONS
Page 1 of 6
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTICAL
SURFACE MOUNT INTERRUPTER SWITCH
QVE00033
SCHEMATIC
DESCRIPTION
The QVE00033 is a miniature slotted optical switch designed for surface mount applications. It consists of a GaAs LED and a sili-
con phototransistor facing each other across a 2mm gap, and packaged in a temperature resistant black plastic housing.
FEATURES
No contact switching
Transistor Output
Compact surface mount package
Opaque black plastic housing
2mm wide slot
0.4 mm aperture width
Tape and reel
Reflow conditions:
Preheat = 160C for 120 seconds
Reflow = 200C for 60 seconds (peak = 240C)
HL-94V-0 housing
0.276 (7.00)
0.146 (3.70)
0.295 (7.50)
0.240 (6.10)
0.079 (2.00)
0.010 (0.25)
(4X)
0.020 (0.50) (4X)
COLLECTOR
EMITTER
ANODE
CATHODE
BOTTOM VIEW
DIMPLE
SECTION "A-A"
RIGHT VIEW
"A"
"A"
0.016 (0.40)
0.165 (4.2)
0.049 (1.25)
center of light path
0.213 (5.40)
0.159 (4.05)
0.099 (2.50)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2
3
1
4
3/19/03
Page 2 of 6
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTICAL
SURFACE MOUNT INTERRUPTER SWITCH
QVE00033
NOTES
1. Derate power dissipation linearly 1.67 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16" (1.6mm) from housing.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Rating
Units
Operating Temperature
T
OPR
-55 to +100
C
Storage Temperature
T
STG
-55 to +100
C
Soldering Temperature (Iron)(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)(2,3)
T
SOL-F
260 for 10 sec
C
Total Power Dissipation
P
TOT
100
mW
EMITTER
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
6
V
Power Dissipation(1)
P
D
75
mW
SENSOR
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Collector Voltage
V
ECO
4.5
V
Collector Current
I
C
20
mA
Power Dissipation(1)
P
D
75
mW
ELECTRICAL/OPTICAL CHARACTERISTICS
(T
A
= 25C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
EMITTER
Forward Voltage
I
F
= 20 mA
V
F
--
1.2
1.4
V
Reverse Current
V
R
= 4 V
I
R
--
--
10
A
Peak Emission Wavelength
I
F
= 20 mA
l
PE
--
940
--
nm
SENSOR
Dark Current
V
CE
= 20 V, I
F
= 0 mA
I
CEO
--
--
100
nA
COUPLED
Collector Current
I
F
= 5 mA, V
CE
= 5 V
I
C(ON)
100
--
600
A
Collector Emitter
I
F
= 10 mA, I
C
= 40 A
V
CE (SAT)
--
--
0.4
V
Rise Time
V
CC
= 5 V, R
L
= 1000
t
r
--
7
150
s
Fall Time
I
C
= 100 A
t
f
--
7
150
s
3/19/03
Page 3 of 6
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTICAL
SURFACE MOUNT INTERRUPTER SWITCH
QVE00033
Figure 2. Normalized Collector Current Vs. Shield Distance
d1-Shield Distance (mm)
Figure 1. Normalized Collector Current Vs. Shield Distance
d2-Shield Distance (mm)
0
1
2
3
4
0
1
2
3
4
I
c(on)
-Normalized Collector Current
0.0
.2
.4
.6
.8
1.0
I
c(on)
-Normalized Collector Current
0.0
.2
.4
.6
.8
1.0
T
T
A
=25
C
V
CE
=5V
Normalized to
I
F
=5mA
A
=25
C
I
F
=5mA
V
CE
=5V
0
Black Shield
d1
T
A
=25
C
I
F
=5mA
V
CE
=5V
+
E
D
+
d2
Black Shield
0
Normalized to
value with shield
removed
Normalized to
value with shield
removed
Figure 4.
Normalized Collector Current Vs. Forward Current
I
F
-Forward Current (mA)
0
0
2
4
6
8
10
12
10
20
30
40
50
I
CE
-Normalized Collector Current
T(off) Normalized
T(on) Normalized
I
CE
(mA)
0
2
4
6
8
10
12
14
16
18
Figure 3.
Collector Current Vs. Collector-Emitter Voltage
V
CE
(V)
1.4
1.2
1.0
.8
.6
.4
.2
0.0
T
A
=25
C
I
F
=20mA
I
F
=10mA
I
F
=5mA
I
F
=1mA
Figure 6.
Fall Time vs. Load Resistance
Figure 5.
Rise Time vs. Load Resistance
RL (k
)
RL (k
)
0
0
2
4
6
8
10
2
4
6
8
.2
0
2
4
6
8
10
.4
.6
.8
1.0
T(off)
T(on)
T
A
=25
C
PW=300
s
PRR=100
s
VCC=5V
Normalized
to RL=1k
T
A
=25
C
PW=300
s
PRR=100
s
VCC=5V
Normalized
to RL=1k
3/19/03
Page 4 of 6
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTICAL
SURFACE MOUNT INTERRUPTER SWITCH
QVE00033
RECOMMENDED PRINTED CIRCUIT BOARD PATTERN (For Reference Only)
6mm
2.5mm
R=.1mm
1.9mm
Typ
.5mm
Typ
3/19/03
Page 5 of 6
2003 Fairchild Semiconductor Corporation
PHOTOTRANSISTOR OPTICAL
SURFACE MOUNT INTERRUPTER SWITCH
QVE00033
TAPE AND REEL DIMENSIONS
0.24 [6.00]
R0.31 [R8.0]
R5.16 [R131.0]
R2.17 [R55.0]
0.09 [2.3]
R0.27
0.047 [R6.751.20]
0.43 [10.75]
VIEW B
R1.97 [R50.0]
3.54 [90.0]
B
R0.24 [R6.0]
0.65 [16.5]
3.94 [100.0]
0.83 [21.10]
R6.5 [R165.0]
R6.3 [R160.0]
0.476 [12.10]
Max
0.256 [6.50] Max
0.232 [5.90]
0.014 [0.35]
0 [0] min
0.005
[0.127] max
0.378 [9.60] Max
COVER TAPE
EMBOSSMENT
0.30 [7.60]
0.059 [1.50]
0.157 [4.00]
0.059 MIN
0.472 [12.00]
0.185
[4.70]
0.213
[5.40]
0.079 [2.00]
0.069 [1.75]
A
DIMPLE
ANODE (PIN1)
FACING SPROCKET HOLE
QVE00033 ASSEMBLY
VIEW A
SCALE: 2:1
UNIT IN CAVITY
0.295 [7.50]
0.630 [16.00]
USER DIRECTION
Quantitiy of units per reel is 800.