QSE773
PLASTIC SILICON PIN PHOTODIODE
1. Derate power dissipation linearly 2.50 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron
1/16"
(1.6mm) minimum from housing.
5. As long as leads are not under any stress or spring tension.
6. Light source is an GaAs LED which has a peak emission
wavelength of 940 nm.
7. All measuements made under pulse conditions.
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100032C
FEATURES
Daylight Filter
Sidelooker Package
Pin Photodiode
Wide Reception Angle, 120
Chip Size = .107
2
inches (2.71
2
mm)
ANODE
CATHODE
SCHEMATIC
0.215 (5.46)
0.199 (5.06)
0.311 (7.90)
0.288 (7.30)
0.100 (2.54)
0.060 (1.52)
0.610 (15.49)
MIN
0.126 (3.20)
0.110 (2.80)
0.020 (0.51)
SQ. (2x)
0.116 (2.95)
0.100 (2.54)
CL
SENSING
SURFACE
ANODE
PACKAGE DIMENSIONS
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +85
C
Storage Temperature
T
STG
-40 to +85
C
Soldering Temperature (Iron)(2,3,4,5)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)(2,3,5)
T
SOL-F
260 for 10 sec
C
Reverse Voltage
V
R
32
V
Power Dissipation(1)
P
D
150
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
QSE773
PLASTIC SILICON PIN PHOTODIODE
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100032C
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Reverse Voltage
I
R
= 0.1 mA
V
R
32
--
V
Dark Reverse Current
V
R
= 10 V
I
R(D)
--
30
nA
Peak Sensitivity
V
R
= 5 V
!
PK
920
nm
Reception Angle @ 1/2 Power
"
+/-60
Degrees
Photo Current
E
e
= 1.0 mW/cm
2
, V
CE
= 5 V
(6)
I
PH
30
--
A
Capacitance V
R
= 3 V
C
20
pF
Rise Time
V
R
= 5 V, R
L
= 1 K
t
r
50
ns
Fall Time
V
R
= 5 V, R
L
= 1 K
t
f
50
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C unless otherwise specified)
1.0
0.8
0.6
0.4
0.2
0
700
800
900
1000
1100
!#
- WAVELENGTH (nm)
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
S (
!
) rel
- RELA
TIVE SPECTRAL SENSITIVITY
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ee - IRRADIANCE (mW/cm2)
Fig. 2 Short Circuit Current vs. Irradiance
I SC
- SHOR
T CIRCUIR CURRENT
Wavelength = 940 nm
TA = 25C
TYPICAL PERFORMANCE CURVES
QSE773
PLASTIC SILICON PIN PHOTODIODE
3 of 4
100032C
TA -TEMPERATURE (C)
Fig. 4 Dark Current vs. Temperature
I
R
- D
ARK CURRENT (nA)
V
R
- REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
I
R
-D
ARK CURRENT (pA)
V
R
- REVERSE VOLTAGE (V)
Fig. 3 Capacitance vs. Reverse Voltage
CAP
A
C
IT
ANCE (pF)
100
80
60
40
20
0
0.01
0.1
1
10
100
f = 1 MHz
E = 0
1000
100
10
1
0
10
20
30
40
50
60
70
80
90
100
VR = 10 V
E = 0
1200
1000
800
600
400
200
0
0
2
4
6
8
10
12
14
16
18
20
E = 0
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com
2000 Fairchild Semiconductor Corporation
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QSE773
PLASTIC SILICON PIN PHOTODIODE
100032C
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