10/19/04
PACKAGE DIMENSIONS, QSB34GR
Page 1 of 6
2004 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
FEATURES
Daylight Filter
Surface Mount Packages:
QSB34GR for overmount board
QSB34ZR for undermount board
Fast PIN Photodiode
Wide Reception Angle, 120
Large Chip Size = .014 in
2
(9 mm
2
)
High Sensitivity
Low Capacitance
Available in 0.470" (12mm) width tape on 7" (178mm)
diameter reel; 1,000 units per reel
Notes:
1. Derate power dissipation linearly 2.50 mW/C above 25C.
2. Solder iron (15W max temp 260C for 5 max sec.)
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Light source is an GaAs LED which has a peak emission wavelength of 940 nm.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +85
C
Storage Temperature
T
STG
-40 to +85
C
Soldering Temperature (Reflow)
(2,3)
T
SOL-F
240 for 5 sec
C
Reverse Voltage
V
R
32
V
Power Dissipation
(1)
P
D
150
mW
0.177 (4.50)
0.169 (4.30)
0.035 (0.90)
0.028 (0.70)
0.157 (4.00)
0.150 (3.80)
0.264 (6.70)
0.240 (6.10)
0.157 (4.00)
0.149 (3.80)
0.067 (1.70)
0.059 (1.50)
.087 (2.20)
.059 (1.50)
.059 (1.50)
0.004 (0.10)
Min
0.016 (0.40)
0.008 (0.20)
Photosensitive surface
0.007 (0.17)
0.005 (0.13)
0.047 (1.20)
05
Anode
NOTE:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .005 (.13) on all non-nominal dimensions unless
otherwise specified.
SCHEMATIC
ANODE
CATHODE
10/19/04
Page 2 of 6
2004 Fairchild Semiconductor Corporation
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Reverse Voltage
I
R
= 0.1 mA
V
R
32
--
V
Dark Reverse Current
V
R
= 10 V
I
R(D)
--
30
nA
Peak Sensitivity
V
R
= 5 V
PK
940
nm
Reception Angle @ 1/2 Power
60
Degrees
Photo Current
Ee = 1.0 mW/cm
2
, V
CE
= 5 V
(4)
I
PH
25
37
--
A
Capacitance V
R
= 3 V
C
25
pF
Rise Time
Fall Time
V
R
= 10 V, R
L
= 50
t
r
t
f
20
20
ns
ns
Spectral Sensitivity
S
.40
A/W
TYPICAL PERFORMANCE CURVES
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
80
60
40
20
0
0
0.5
1.0
1.5
Ee - IRRADIANCE (mW/cm2)
Fig. 2 Short Circuit Current vs. Irradiance
I SC
- SHOR
T CIRCUIR CURRENT (
A)
Ta = 25
C
600
800
900
1000
1100
1200
1300
Wave Length Nanometers
Relativ
e Response %
0
20
40
60
80
100
V
R
= 5V
= 940nm
10/19/04
Page 3 of 6
2004 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
TYPICAL PERFORMANCE CURVES
(Cont.)
TA -TEMPERATURE (
C)
Fig. 4 Dark Current vs. Temperature
I R
- D
ARK CURRENT (nA)
V
R
- REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
I
R
-D
ARK CURRENT (pA)
V
R
- REVERSE VOLTAGE (V)
Fig. 3 Capacitance vs. Reverse Voltage
CAP
A
CIT
ANCE (pF)
80
60
40
20
0
0.1
1
10
100
f = 1 MHz
H = 0mW/cm
2
1000
100
10
1
20
40
60
80
100
V
R
= 10 V
Ee = 0mV/cm
2
1200
1000
800
600
400
200
0
0
2
4
6
8
10
12
14
16
18
20
Ee = 0mV/cm
2
LOAD RESISTANCE R
L
(
)
Fig. 6 Response Time vs. Load Resistance
RESPONSE
TIME tr
, ff (
s)
10
-3
10
-2
10
-1
10
0
10
1
10
1
10
2
10
3
10
4
10
5
V
R
= 10V
TA = 25
C
10/19/04
Page 4 of 6
2004 Fairchild Semiconductor Corporation
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
QSB34GR, QSB34ZR
PACKAGE DIMENSIONS, QSB34ZR
0.177 (4.50)
0.169 (4.30)
0.035 (0.90)
0.028 (0.70)
0.157 (4.00)
0.150 (3.80)
0.264 (6.70)
0.240 (6.10)
0.043 (1.10)
0.035 (0.90)
0.067 (1.70)
0.059 (1.50)
.087 (2.20)
0.008 (0.20)
0.004 (0.10)
0.012 (0.30)
0.047 (1.20)
0.004 (0.10)
05
Anode
Photosensitive
surface
.059 (1.50)
.059 (1.50)
NOTE:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .005 (.13) on all non-nominal dimensions unless
otherwise specified.
RECOMMENDED SOLDER SCREEN
PATTERN (For Reference Only)
ORDERING INFORMATION
Option
Description
QSB34GR
Gullwing, 1000 units per reel
QSB34ZR
Z-Bend reversed, 1000 units per reel
0.258
[6.55]
0.004
[.10] R TYP
0.030
[0.75]
0.030
[0.75]
0.035
[0.90]
0.067
[1.70]
RECOMMENDED IR REFLOW
SOLDERING PROFILE
1 ~ 5
C/sec.
Pre-heating
180 ~ 200
C
260
C Max.
120sec. Max.
60sec. Max.
Above 220
C
10sec. Max.
1 ~ 5
C/sec.
10/19/04
Page 5 of 6
2004 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR
SURFACE MOUNT SILICON
PIN PHOTODIODE
QSB34
TAPE & REEL DIMENSIONS
2.50
0.5
2.50
0.5
13
0.5
13.2
1.5
16.0
0.2
178
1
.
0
60
.
2
0
.
5
1.5
0.1
CATHODE
Unit: mm
COVER TAPE
1.50
0.25
2.0
0.05
8.0
0.10
1.45
0.10
9
6.90
0.10
5.5
0.05
1.75
0.10
12
+0.3 0.1
4.0
0.10
4.20
0.10
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