MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
MMBTA64
MPSA64
PZTA64
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CES
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA64
*MMBTA64
**PZTA64
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
125
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 2V
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
A64, Rev A
MPSA64 / MMBTA64 / PZTA64
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 100
A, I
B
= 0
30
V
I
CBO
Collector-Cutoff Current
V
CB
= 30 V, I
E
= 0
100
nA
I
EBO
Emitter-Cutoff Current
V
EB
= 10 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
10,000
20,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 0.1 mA
1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
125
MHz
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (A)
V
-
CO
LL
EC
T
O
R
EM
I
T
T
E
R V
O
L
T
A
G
E
(
V
)
C
C
ESA
T
= 1000
25 C
- 40 C
125 C
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
0
10
20
30
40
50
I - COLLECTOR CURRENT (A)
h
-
TYP
I
C
A
L PU
LS
E
D
CU
RR
EN
T G
A
I
N
(
K
)
C
FE
125 C
25 C
- 40 C
V = 5V
CE
PNP Darlington Transistor
(continued)
MPSA64 / MMBTA64 / PZTA64
Typical Characteristics
(continued)
PNP Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (A)
V
-
BA
SE
EM
I
TTE
R V
O
L
T
A
G
E
(
V
)
C
B
E
SA
T
25 C
- 40 C
125 C
= 1000
Base Emitter ON Voltage vs
Collector Current
0.001
0.01
0.1
1
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (A)
V
-
BA
SE EMI
TTER
ON VOL
T
A
GE (
V
)
C
BE
O
N
V = 5V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LLE
C
T
O
R
C
URR
E
N
T
(
n
A
)
A
CB
O
V = 15V
CB
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
100
0
4
8
12
16
REVERSE VOLTAGE (V)
C
A
P
A
CI
T
A
NCE
(
p
F)
C
f = 1.0 MHz
ib
C
ob
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R DI
S
S
I
P
A
T
I
O
N (
W
)
D
o
SOT-223
TO-92
SOT-23
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