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2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD162
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
* Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Width=20
s, Duty Cycle
1%
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
2
A
P
C
P
C
*
Collector Power Dissipation
500
1.3
mW
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=10
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
25
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
6
V
I
CBO
Collector Cut-off Current
V
CB
=20V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
BE
=4V, I
C
=0
100
nA
h
FE1
h
FE2
DC Current Gain
V
CE
=2V, I
C
=0.1A
V
CE
=2V, I
C
=1.5A
100
65
560
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=1.5A, I
B
=75mA
0.18
0.4
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=1.5A, I
B
=75mA
0.85
1.2
V
f
T
Current Gain Bandwidth product
V
CE
=10V, I
C
=50mA
150
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
19
pF
t
ON
* Turn On Time
V
CC
=12V, V
BE
=5V
I
B1
= -I
B2
=25mA
I
C
=0.5A, R
L
=25
60
ns
t
STG
* Storage Time
500
ns
t
F
* Fall Time
25
ns
Classification R
S
T
U
h
FE
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
KSD1621
High Current Driver Applications
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSB1121
SYX
Marking
h
FE
grade
1. Base 2. Collector 3. Emitter
SOT-89
1
2002 Fairchild Semiconductor Corporation
KSD162
1
Rev. A2, November 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.4
0.8
1.2
1.6
2.0
I
B
= 50mA
I
B
= 2mA
I
B
= 10mA
I
B
= 30mA
I
B
= 8mA
I
B
= 6mA
I
B
= 4mA
I
B
= 20mA
I
B
= 0
I
C
[A], C
O
L
L
ECT
O
R C
URRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01
0.1
1
10
1
10
100
1000
V
CE
= 2V
h
FE
, DC
CUR
RE
NT
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
V]
,
SA
TURATI
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
= 2V
I
C
[A], CO
L
L
ECT
O
R CUR
RENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
1000
I
E
=0
f = 1MHz
C
ob
[
p
F
], C
A
P
A
C
IT
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
1000
V
CE
= 10V
f
T
[M
Hz
], CURRENT
GAIN-
BANDW
IDT
H
PRO
DUCT
I
C
[A], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
KSD162
1
Rev. A2, November 2002
Typical Characteristics
(Continued)
Figure 7. Safe Operating Area
Figure 8. Power Derating
0.1
1
10
100
0.01
0.1
1
10
T
a
=25
o
C
Single Pulse
Mounted on Ceramic Board
(250mm
2
0.8mm)
1m
s
I
C
MAX. (DC)
100
ms
10m
s
I
C
MAX. (Pulse)
I
C
[
A
]
,
COL
L
ECT
O
R
CUR
RE
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
50
100
150
200
0.0
0.4
0.8
1.2
1.6
No Heat
Sink
M
ount
ed
on
Ceram
ic B
oard (
250m
m
2
0.
8m
m
)
P
C
[
W
]
,
PO
WER DI
SSI
PATI
O
N
T
a
[
o
C], AMBIENT TEMPERATURE
0.40
0.10
2.50
0.20
(0.50)
(0.40)
4.10
0.20
0.40
+0.10
0.05
0.50
0.10
1.65
0.10
4.50
0.20
1.50
0.20
C0.2
1.50 TYP 1.50 TYP
(1.10)
SOT-89
Package Dimensions
KSD162
1
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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