2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC275
5
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
20
mA
P
C
Collector Power Dissipation
150
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=20V, I
E
=0
0.1
A
h
FE
DC Current Gain
V
CE
=10V, I
C
=3mA
60
120
240
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=3mA 400
600
MHz
C
RE
Reverse Transfer Capacitance
f=1MHz, V
CB
=10V, I
E
=0 0.3
0.5
pF
G
PE
Power Gain
V
CE
=10V, I
C
=3mA
f=200MHz
20
23
dB
I
AGC
AGC Current
f=200MHz
I
E
at G
R
= -30dB
-10
-12
mA
NF
Noise Figure
V
CE
=10V, I
C
=3mA
f=200MHz
2.0
0.3
dB
Classification R
O
Y
h
FE
60 ~ 120
90 ~ 180
120 ~ 240
1. Base 2. Emitter 3. Collector
KSC2755
RF AMP, FOR VHF &TV TUNER
Low NF, High G
PE
Forward AGC Capability to 30 dB
NF=2.0dB (TYP.), G
PE
=23dB (TYP.) at f=200MHz
H1O
Marking
h
FE
grade
1
2
3
SOT-23
2002 Fairchild Semiconductor Corporation
KSC275
5
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
Figure 5. f
T
- I
C
Figure 6. Cre - V
CB
0
2
4
6
8
10
0
2
4
6
8
10
I
B
= 140
A
I
B
= 120
A
I
B
= 100
A
I
B
= 80
A
I
B
= 60
A
I
B
= 40
A
I
B
= 20
A
I
C
[
m
A],
COL
L
ECT
O
R
CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
1000
V
CE
= 10V
h
FE
, DC
CURRENT
G
A
I
N
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
10
100
1000
10000
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
m
V
]
,
SAT
URATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
100
I
C
= 10 I
B
1000
10000
V
BE
(
s
a
t
)
[
m
V
]
,
SAT
U
R
AT
I
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
100
10
100
1000
V
CE
= 10 V
f
T
[M
H
z
], C
URRE
N
T
G
A
IN
B
A
NDW
IDT
H
P
R
O
D
U
C
T
I
C
[mA], COLLECTOR CURRENT
1
10
100
0.1
1
10
f = 1 MHz
I
E
= 0
C
re
[
p
F
]
,
REV
E
RSE
T
R
ANS
F
ER CA
PA
CI
T
A
NCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Definition
Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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No Identification Needed
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
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