2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC139
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
C unless otherwise noted
Electrical Characteristics
T
a
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
4
V
I
C
Collector Current
20
mA
P
C
Collector Power Dissipation
250
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=10
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=5mA, I
B
=0
30
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
A, I
C
=0
4
V
I
CBO
Collector Cut-off Current
V
CB
=20V, I
E
=0
0.1
A
h
FE
DC Current Gain
V
CE
=10V, I
C
=2mA
40
180
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=3mA 400
700
MHz
C
RE
Reverse Transfer Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.35
0.5
pF
G
PE
Power Gain
V
CE
=10V, I
C
=3mA
f=200MHz
20
24
dB
I
AGC
AGC Current
I
E
at G
R
= -30dB, f=200MHz
-10
-12
mA
NF
Noise Figure
V
CE
=10V, I
C
= 3mA
f=200MHz
2.0
3.0
dB
Classification R
O
Y
h
FE
40 ~ 80
60 ~ 140
90 ~ 180
KSC1393
TV VHF Tuner RF Amplifier (Forward AGC)
High Current Gain Bandwidth Product : f
T
=700MHz (TYP.)
Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz
Low Reverse Transfer Capacitance : C
RE
=0.5pF (MAX.)
1. Base 2. Emitter 3. Collector
TO-92
1
2002 Fairchild Semiconductor Corporation
KSC139
3
Rev. B1, September 2002
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Reverse Capacitance
Figure 5. Current Gain Bandwidth Product
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
I
B
= 200
AI
B
= 180
A
I
B
= 160
A
I
B
= 140
A
I
B
= 120
A
I
B
= 100
A
I
B
= 80
A
I
B
= 60
A
I
B
= 40
A
I
B
= 20
A
I
C
[
m
A
]
,
CO
L
L
E
C
T
O
R C
U
R
R
E
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
10
100
V
CE
= 2V
h
FE
, DC
CUR
RENT
G
A
IN
I
C
[mA], COLLECTOR CURRENT
0.1
1
10
0.01
0.1
1
10
I
C
=10I
B
V
BE
(sat)
V
CE
(sat)
V
BE
(s
a
t
),
V
CE
(
s
a
t
)
[
V]
,
SAT
U
R
ATI
O
N
VO
L
T
AG
E
I
C
[mA], COLLECTOR CURRENT
1
100
0.1
1
10
f=1MHz
I
E
=0
C
re
[pF
], C
A
P
A
C
IT
A
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
0.1
1
10
100
10
100
1000
10000
V
CE
= 10V
f
T
[MH
z
],
C
URRE
N
T
G
A
IN
-B
A
N
DWID
T
H
P
R
O
DUC
T
I
C
[mA], COLLECTOR CURRENT
2002 Fairchild Semiconductor Corporation
Rev. I1
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
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