2004 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.4
Features
Quasi Resonant Converter Controller
Internal Burst Mode Controller for Stand-by Mode
Pulse by Pulse Current Limiting
Over Current Latch Protection
Over Voltage Protection (Vcc: Min. 27V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
The integrated PWM controller includes the fixed oscillator,
the under voltage lock out, the leading edge blanking, the
optimized gate turn-on/turn-off driver, the thermal shut down
protection, the over voltage protection, and the temperature
compensated precision current sources for loop compensation
and fault protection circuitry. Compared to a discrete
MOSFET and a controller or a RCC switching converter
solutions, a Fairchild Power Switch(FPS) can reduce the total
number of components, design size, and weight, so it will
improve efficiency, productivity, and system reliability. It has
a basic platform well suited for cost-effective design in a
quasi-resonant converter as a C-TV power supply.
TO-220F-5L
1. Drain 2. GND 3. V
CC
4. Feedback 5. Sync
Internal Block Diagram
Rsense
3
1
2
4
VREF
Internal
BIAS
S
Q
R
LEB
450ns
S
QB
R
Ro
n
Rof
f
Power
on
Reset
OVP
OLP
7.5V
-
+
30V
VCC
-
+
-
+
UVLO
15V/9V
5
Burst Mode
3.5V/1.25V
R
2.5R
-
+
-
+
Offset
Thermal
Thermal
Thermal
Thermal
Shut Down
Shut Down
Shut Down
Shut Down
S
Q
R
Power
Reset
Delay
80ns
1V
-
+
OCL
1V
FEEDBACK
FEEDBACK
FEEDBACK
FEEDBACK
VCC
VCC
VCC
VCC
DRAIN
DRAIN
DRAIN
DRAIN
SOURCE
SOURCE
SOURCE
SOURCE
Normal Mode
4.6V/2.6V
OSC
-
+
-
+
Idelay
Ifb
VREF
11V on
12V off
-
+
SYNC
SYNC
SYNC
SYNC
Ron
Roff
KA5Q0565RT
Fairchild Power Switch(FPS)
KA5Q0565RT
2
Absolute Maximum Ratings
(Ta=25
C, unless otherwise specified)
Notes:
1. T
j
= 25
C to 150
C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 30mH, V
DD
= 50V, R
G
= 25
, starting T
j
= 25
C
4. L = 13uH, starting T
j
= 25
C
Parameter
Symbol
Value
Unit
Drain-source Voltage
V
DSS
650
V
Drain-Gate Voltage (R
GS
=1M
)
V
DGR
650
V
Gate-Source (GND) Voltage
V
GS
30
V
Drain Current Pulsed
(2)
I
DM
11
A
DC
Single Pulsed Avalanch Current
(3)
(Energy
(2)
)
I
AS
(E
AS
)
13(400)
A(mJ)
Continuous Drain Current (Tc = 25C)
I
D
2.8
A
DC
Continuous Drain Current (T
C
=100
C)
I
D
1.7
A
DC
Supply Voltage
V
CC
30
V
Input Voltage Range
V
FB
-0.3 to Vcc
V
Total Power Dissipation
P
D
38
W
Derating
0.3
W/
C
Operating Junction Temperature
T
J
+160
C
Operating Ambient Temperature
T
A
-25 to +85
C
Storage Temperature Range
T
STG
-55 to +150
C
Thermal Resistance
R
thjc
3.29
C/W
ESD Capability, HBM Model (All pins)
-
2.0
kV
ESD Capability, Machine Model (All pins)
-
300
V
KA5Q0565RT
3
Electrical Characteristics (SFET Part)
(Ta=25
C unless otherwise specified)
Note:
1. Pulse test : Pulse width
300
S, duty
2%
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 50
A
650
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Max, Rating, V
GS
= 0V
-
-
200
A
V
DS
= 0.8*Max., Rating
V
GS
= 0V, T
C
= 85
C
-
-
300
A
Static Drain-source on Resistance
(Note)
R
DS(ON)
V
GS
= 10V, I
D
= 2.3A
-
1.8
2.2
Input Capacitance
Ciss
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
-
780
-
pF
Output Capacitance
Coss
-
90
-
Reverse Transfer Capacitance
Crss
-
40
-
Turn on Delay Time
td(on)
V
DD
= 0.5BV
DSS
, I
D
= 7.0A
(MOSFET switching
time are essentially
independent of operating
temperature)
-
15
40
nS
Rise Time
tr
-
45
100
Turn Off Delay Time
td(off)
-
60
130
Fall Time
tf
-
40
90
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS
= 10V, I
D
= 7.0A,
V
DS
= 0.5B V
DSS
(MOSFET
Switching time are Essentially
independent of operating
temperature)
-
43
55
nC
Gate-Source Charge
Qgs
-
4.0
-
Gate-Drain (Miller) Charge
Qgd
-
7.3
-
KA5Q0565RT
4
Electrical Characteristics
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters is the current flowing in the Control IC.
2. These parameters, although guaranteed, are tested in EDS(wafer test) process.
3. These parameters indicate Inductor Current.
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage
V
START
V
FB
= GND
14
15
16
V
Stop Threshold Voltage
V
STOP
V
FB
= GND
8
9
10
V
OSCILLATOR SECTION
Initial Frequency
F
OSC
-
18
20
22
kHz
Voltage Stability
F
STABLE
12V
Vcc
23V
0
1
3
%
Temperature Stability (Note2)
F
OSC
-25
C
Ta
85
C
0
5
10
%
Maximum Duty Cycle
D
MAX
-
92
95
98
%
Minimum Duty Cycle
D
MIN
-
-
-
0
%
FEEDBACK SECTION
Feedback Source Current
I
FB
V
FB
= GND
0.7
0.9
1.1
mA
Shutdown Feedback Voltage
V
SD
Vfb
6.9V
6.9
7.5
8.1
V
Shutdown Delay Current
I
DELAY
V
FB
= 5V
4
5
6
A
PROTECTION SECTION
Over Voltage Protection
V
CCOVP
V
CC
26V
27
30
33
V
Over Current Latch Voltage (Note2)
V
OCL
-
0.9
1.0
1.1
V
Thermal Shutdown Temp.
T
SD
-
140
160
-
C
SYNC SECTION
Normal Sync High Threshold Voltage
V
NSH
V
CC
= 16V, Vfb = 5V
4.0
4.6
5.2
V
Normal Sync Low Threshold Voltage
V
NSL
V
CC
= 16V, Vfb = 5V
2.3
2.6
2.9
V
Burst Sync High Threshold Voltage
V
BSH
V
CC
= 10.5V, Vfb = 0V
3.2
3.6
4.0
V
Burst Sync Low Threshold Voltage
V
BSL
V
CC
= 10.5V, Vfb = 0V
1.1
1.3
1.5
V
KA5Q0565RT
5
Electrical Characteristics
(Continued)
(Ta=25
C unless otherwise specified)
Note:
1. These parameters is the current flowing in the Control IC.
2. These parameters, although guaranteed, are tested in EDS(wafer test) process.
3. These parameters indicate Inductor Current.
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
BURST MODE SECTION
Burst Mode Low Threshold Voltage
V
BURL
Vfb = 0V
10.4 11.0 11.6
V
Burst Mode High Threshold Voltage
V
BURH
Vfb = 0V
11.4 12.0 12.6
V
Burst Mode Enable Feedback Voltage
V
BEN
Vcc = 10.5V
0.7
1.0
1.3
V
Burst Mode Peak Current Limit
I
BU_PK
Vcc = 10.5V
0.65 0.85
1.1
A
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(Note3)
I
PK
-
3.08
3.5
3.92
A
TOTAL DEVICE SECTION
Start Up Current
I
START
Vfb = GND, V
CC
= 14V
-
0.1
0.2
mA
Operating Supply Current (Note1)
I
OP
Vfb = GND, V
CC
= 16V
-
10
18
mA
I
OP(MIN)
Vfb = GND, V
CC
= 10V
I
OP(MAX)
Vfb = GND, V
CC
= 28V
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