2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMS6G10US60S Rev. B1
FM
S
6
G1
0US6
0S
Comp
ac
t
&
C
o
mpl
e
x
M
odule
August 2005
FMS6G10US60S
Compact & Complex Module
Features
Short Circuit Rated 10
s @ T
C
= 100
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE
(sat) = 2.1 V @ I
C
= 10A
High Input Impedance
Built-in 1 Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
Applications
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It's
designed for the applications such as motor control and general
inverters where short-circuit ruggedness is required.
Package Code : 25PM-AA
Internal Circuit Diagram
23
24
4
21
20
8
19
18
9
13
17
16
14
10
15
5
3
6
7
NTC
11
12
2
www.fairchildsemi.com
FMS6G10US60S Rev. B1
FM
S
6
G1
0US6
0S
Comp
ac
t
&
C
o
mpl
e
x
M
odule
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Package Marking and Ordering Information
(2) TMC2 Relibility test was done under -45
C ~ 125C
Symbol
Description
FMS6G10US60S
Units
Inverter
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 80
C
10
A
I
CM (1)
Pulsed Collector Current
20
A
I
F
Diode Continuous Forward Current
@ T
C
= 80
C
10
A
I
FM
Diode Maximum Forward Current
20
A
P
D
Maximum Power Dissipation
@ T
C
= 25
C
66
W
T
SC
Short Circuit Withstand Time
@ T
C
= 100
C
10
s
Converter
V
RRM
Repetitive Peak Reverse Voltage
1600
V
I
O
Average Output Rectified Current
20
A
I
FSM
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
200
A
I
2
t
Energy pulse @ 1Cycle at 60Hz
164
A
2
s
Common
T
J
Operating Junction Temperature
-40 to +150
C
T
STG
Storage Temperature Range
-40 to +125
C
V
ISO
Isolation Voltage
@ AC 1minute
2500
V
Mounting Torque
Mounting part Screw
@ M4
2.0
Nm
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FMS6G10US60S
FMS6G10US60S
25PM-AA
--
--
--
3
www.fairchildsemi.com
FMS6G10US60S Rev. B1
FM
S
6
G1
0US6
0S
Comp
ac
t
&
C
o
mpl
e
x
M
odule
Electrical Characteristics of IGBT
@ Inverter
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250
A
600
--
--
V
B
VCES
/
T
J
Temperature Coeff. of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
A
I
GES
Gate - Emitter Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
Gate - Emitter Threshold Voltage
I
C
= 10mA, V
CE
= V
GE
5.0
6.5
8.5
V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 10A
,
V
GE
= 15V
--
2.1
2.7
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
710
--
pF
C
oes
Output Capacitance
--
57
--
pF
C
res
Reverse Transfer Capacitance
--
12
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 10A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
65
130
ns
t
r
Rise Time
--
65
130
ns
t
d(off)
Turn-Off Delay Time
--
80
160
ns
t
f
Fall Time
--
100
200
ns
E
on
Turn-On Switching Loss
--
0.15
--
mJ
E
off
Turn-Off Switching Loss
--
0.2
--
mJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 10A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
70
140
ns
t
r
Rise Time
--
60
120
ns
t
d(off)
Turn-Off Delay Time
--
90
180
ns
t
f
Fall Time
--
200
350
ns
E
on
Turn-On Switching Loss
--
0.16
--
mJ
E
off
Turn-Off Switching Loss
--
0.3
--
mJ
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@ T
C
= 100
C
10
--
--
us
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 10A,
V
GE
= 15V
--
35
50
nC
Q
ge
Gate-Emitter Charge
--
8
15
nC
Q
gc
Gate-Collector Charge
--
12
20
nC
4
www.fairchildsemi.com
FMS6G10US60S Rev. B1
FM
S
6
G1
0US6
0S
Comp
ac
t
&
C
o
mpl
e
x
M
odule
Electrical Characteristics of DIODE
@ Inverter
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
@ Converter
T
C
= 25
C unless otherwise noted
Thermal Characteristics
NTC Thermistor Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 10A
T
C
= 25
C
--
1.9
2.8
V
T
C
= 100
C
--
2.0
--
t
rr
Diode Reverse Recovery Time
I
F
= 10A
di / dt = 20 A/us
T
C
= 25
C
--
85
150
ns
T
C
= 100
C
--
110
--
I
rr
Diode Peak Reverse Recovery Current
T
C
= 25
C
--
0.7
1.4
A
T
C
= 100
C
--
1.0
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
30
105
nC
T
C
= 100
C
--
55
--
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 20A
T
C
= 25
C
--
1.1
1.5
V
T
C
= 100
C
--
1.0
--
I
RRM
Repetitive Reverse Current
V
R
= V
RRM
T
C
= 25
C
--
--
8
mA
T
C
= 100
C
--
5
--
Symbol
Parameter
Typ.
Max.
Units
Inverter
R
JC
Junction-to-Case (IGBT Part, per 1/6 Module)
--
1.9
C/W
R
JC
Junction-to-Case (DIODE Part, per 1/6 Module)
--
2.9
C/W
Converter
R
JC
Junction-to-Case (DIODE Part, per 1/6 Module)
--
1.5
C/W
Weight
Weight of Module
60
--
g
Symbol
Parameter
Tol.
Typ.
Units
Thermistor
R25
Rated Resistance @ Tc = 25
C
+/- 5 %
4.7
K
B(25/100)
B - Value
+/- 3 %
3530
5
www.fairchildsemi.com
FMS6G10US60S Rev. B1
FM
S
6
G1
0US6
0S
Comp
ac
t
&
C
o
mpl
e
x
M
odule
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 4. Transient Thermal Impedance
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
1
1 0
0
5
1 0
1 5
2 0
2 5
3 0
Common Emitter
V
GE
= 15 V
T
C
= 25
T
C
= 125 ------
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
,
I
C
[
A
]
C o l l e c t o r - E m i t t e r V o l t a g e , V
C E
[ V ]
0
2
4
6
8
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
Common Emitter
T
C
= 25
o
C
V
G E
= 1 0 V
1 2 V
1 5 V
2 0 V
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
,
I
C
[
A
]
C o l l e c t o r - E m i t t e r V o l t a g e , V
C E
[ V ]
- 5 0
0
5 0
1 0 0
1 5 0
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
4 . 0
Common Emitter
V
GE
= 15 V
I
C
= 5 A
1 0 A
2 0 A
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
,
V
C
E
(
s
a
t
)
[
V
]
C a s e T e m p e r a t u r e , T
C
[
o
C ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
S i n g l e P u l s e
( T h e r m a l R e s p o n s e )
F R D
I G B T
Ther
mal
R
e
s
p
o
n
se
,
Zt
h
j
c
[
/
W
]
Rectangular Pulse Duration [sec]
0
4
8
1 2
1 6
2 0
0
4
8
1 2
1 6
2 0
Common Emitter
T
C
= 25
2 0 A
1 0 A
I
C
= 5 A
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
,
V
C
E
(
s
a
t
)
[
V
]
G a t e - E m i t t e r V o l t a g e , V
G E
[ V ]
0
4
8
1 2
1 6
2 0
0
4
8
1 2
1 6
2 0
Common Emitter
T
C
= 125
2 0 A
1 0 A
I
C
= 5 A
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
,
V
C
E
(
s
a
t
)
[
V
]
G a t e - E m i t t e r V o l t a g e , V
G E
[ V ]
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