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2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
December 2004
FDZ7064AS Rev. A
FDZ7064AS 30V N-Channel P
o
werT
renc
h SyncFETTM BGA MOSFET
FDZ7064AS
30V N-Channel PowerTrench
SyncFETTM BGA MOSFET
Features
13.5 A, 30 V.
R
DS(ON)
= 5.6 m
@ V
GS
= 10 V
R
DS(ON)
= 7.1 m
@ V
GS
= 4.5 V
Occupies only 14 mm
2
of PCB area. Only 42% of the area of
SO-8
Ultra-thin package: less than 0.76 mm height when mounted
to PCB
3.5 x 4 mm
2
Footprint
High power and current handling capability.
Applications
DC/DC converters
General Description
This MOSFET is designed to replace a single MOSFET and
parallel Schottky diode in synchronous DC:DC power supplies.
Combining Fairchild's 30V PowerTrench SyncFET process with
state of the art BGA packaging, the FDZ7064AS minimizes both
PCB space and R
DS(ON)
. This BGA SyncFET embodies a
breakthrough in both packaging and power MOSFET integration
which enables the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-low profile
packaging, low gate charge, ultra-low reverse recovery charge
and low R
DS(ON)
.
Absolute Maximum Ratings
T
A
=25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
Continuous
(Note 1a)
13.5
A
Pulsed
60
P
D
Power Dissipation (Steady State)
(Note 1a)
2.2
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
55 to +150
C
D
D
S
S
S
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
D
D
D
D
G
Pin 1
Bottom
Top
S
G
D
Pin 1
F7064AS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
56
C/W
R
JB
Thermal Resistance, Junction-to-Ball
(Note 1)
4.5
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
0.6
Device Marking
Device
Reel Size
Tape width
Quantity
7064AS
FDZ7064AS
13"
12mm
3000
2
www.fairchildsemi.com
FDZ7064AS Rev. A
FDZ7064AS 30V N-Channel P
o
werT
renc
h SyncFETTM BGA MOSFET
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1.
R
JA
is determined with the device mounted on a 1 in
2
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, R
JB
, is defined for reference. For R
JC
, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
JC
and R
JB
are
guaranteed by design while R
JA
is determined by the user's board design.
2.
Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature Coefficient I
D
= 10mA, Referenced to 25
C
25
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
uA
I
GSS
GateBody Leakage
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1mA
1
1.4
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10mA, Referenced to 25
C
0.3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 13.5 A
V
GS
= 4.5 V, I
D
= 12 A
V
GS
=10 V, I
D
=13.5A, T
J
=125
C
4.6
5.7
5.9
5.6
7.1
7.4
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,V
DS
= 5 V
60
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 13.5 A
61
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1960
pF
C
oss
Output Capacitance
570
pF
C
rss
Reverse Transfer Capacitance
210
pF
R
G
Gate Resistance
V
GS
= 15 mV, I
D
= 6 A
1.4
W
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
9
18
nS
t
r
TurnOn Rise Time
12
22
nS
t
d(off)
TurnOff Delay Time
39
62
nS
t
f
TurnOff Fall Time
18
33
nS
Q
g(TOT)
Total Gate Charge, Vgs = 10V
V
DS
= 15 V, I
D
= 13.5A
36
51
nC
Q
g
Total Gate Charge, Vgs = 5V
20
28
nC
Q
gs
GateSource Charge
5
nC
Q
gd
GateDrain Charge
6
nC
DrainSource Diode Characteristics
V
SD
DrainSource Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.2 A (Note 1)
0.4
0.7
V
t
rr
Diode Reverse Recovery Time
I
F
= 13.5 A, d
iF
/d
t
= 300 A/s
See Diode Characteristic, page 5
23
nS
Q
rr
Diode Reverse Recovery Charge
21
nC
a) 56C/W when mounted on a
1in
2
pad of 2 oz copper
b) 119C/W when mounted on a mini-
mum pad of 2 oz copper
Scale 1 : 1 on letter size paper
3
www.fairchildsemi.com
FDZ7064AS Rev. A
FDZ7064AS 30V N-Channel P
o
werT
renc
h SyncFETTM BGA MOSFET
Typical Characteristics
0
10
20
30
40
50
60
0
0.25
0.5
0.75
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
3.5V
2.5V
V
GS
=10.0V
6.0V
4.5V
0.75
1
1.25
1.5
1.75
2
2.25
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
3.5V
4.0V
4.5V
6.0V
10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
0.0025
0.005
0.0075
0.01
0.0125
0.015
0.0175
0.02
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
=6.8A
T
A
= 125
C
T
A
= 25
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
C
25
C
-55
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
C
25
C
-55
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
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FDZ7064AS Rev. A
FDZ7064AS 30V N-Channel P
o
werT
renc
h SyncFETTM BGA MOSFET
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13.5A
V
DS
= 10V
20V
15V
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 119
C/W
T
A
= 25
C
10ms
1ms
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 119
C/W
T
A
= 25
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 119
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
www.fairchildsemi.com
FDZ7064AS Rev. A
FDZ7064AS 30V N-Channel P
o
werT
renc
h SyncFETTM BGA MOSFET
Typical Characteristics
SyncFET Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 12 FDZ7064AS.
Figure 12. FDZ7064AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET .
Figure 13. Non-SyncFET (FDZ7064N) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and temperature.
CURRENT : 0.4A/div
TIME : 12.5ns/div
CURRENT : 0.4A/div
TIME : 12.5ns/div
0.00001
0.0001
0.001
0.01
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T
A
= 125
C
T
A
= 25
C
T
A
= 100
C
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