January 2006
2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
FDN359BN
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild's Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
2.7 A, 30 V.
R
DS(ON)
= 0.046
@ V
GS
= 10 V
R
DS(ON)
= 0.060
@ V
GS
= 4.5 V
Very fast switching speed.
Low gate charge (5nC typical)
High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
Maximum Drain Current Continuous
(Note 1a)
2.7
I
D
Pulsed
15
A
Maximum Power Dissipation
(Note 1a)
0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Temperature Range
-
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
359B
FDN359BN
7''
8mm
3000 units
FDN359BN
FDN359BN Rev A(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A,Referenced to 25
C
21 mV/
C
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
DSS
Zero Gate Voltage Drain Current
T
J
= -55
O
C
10
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
1 1.8 3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,Referenced to 25
C
4 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 2.7 A
V
GS
= 4.5 V,
I
D
= 2.4 A
V
GS
= 10 V, I
D
= 2.7 A, T
J
= 125
C
0.026
0.032
0.033
0.046
0.060
0.075
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
15
A
g
FS
Forward
Transconductance V
DS
= 5V,
I
D
= 2.7 A
11
S
Dynamic Characteristics
C
iss
Input
Capacitance
485
650
pF
C
oss
Output
Capacitance
105
140
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
65
100 pF
R
G
Gate Resistance
f = 1.0 MHz
1.8
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
7
14
ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
20
35
ns
t
f
TurnOff
Fall
Time
V
DD
= 15V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
2 4 ns
Q
g
Total Gate Charge
5
7
nC
Q
gs
GateSource
Charge
1.3
nC
Q
gd
GateDrain
Charge
V
DS
= 15 V,
I
D
= 2.7 A,
V
GS
= 5 V
1.8 nC
FDN359BN
FDN359BN Rev A(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
0.42
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.7 1.2 V
trr
Diode Reverse Recovery Time
12 20 ns
Qrr
Diode Reverse Recovery Charge
IF = 2.7A, diF/dt = 100 A/s
3 5 nC
otes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 250
C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
FDN359BN
FDN359BN Rev A(W)
Typical Characteristics
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N CU
RR
ENT
(
A
)
3.5V
4.0V
V
GS
= 10V
3.0V
2.5V
4.5V
0.6
1
1.4
1.8
2.2
2.6
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
RMA
L
I
Z
E
D
DR
AI
N
-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
AN
CE
V
GS
= 3.0V
6.0
5.0V
4.5V
4.0V
3.5V
10.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
RMAL
I
Z
E
D
DR
AI
N
-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
AN
CE
I
D
= 2.7A
V
GS
= 10V
0.02
0.04
0.06
0.08
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N
)
,
O
N
-R
ES
I
S
T
ANC
E
(
O
HM
)
I
D
= 1.35A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N
CU
RR
E
N
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVE
RSE DRAI
N
C
URREN
T
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN359BN
FDN359BN Rev A(W)
Typical Characteristics
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
GS
, GATE
-
SOUR
CE
VOLT
AGE (V)
I
D
= 2.7A
V
DS
= 10V
15V
20V
0
200
400
600
800
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PA
CI
TA
NC
E (pF
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CU
RRE
NT
(A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 270
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
),
PEA
K TRAN
SIE
N
T PO
WE
R (
W
)
SINGLE PULSE
R
JA
= 270C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORM
ALI
Z
E
D
E
F
F
E
C
T
I
V
E
T
R
ANS
I
E
NT THE
R
M
A
L
RE
S
I
S
T
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 270 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN359BN
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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