April 2002
2002 Fairchild Semiconductor Corporation
FDC6392S Rev C(W)
FDC6392S
20V Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
MOSFET:
2.2 A, 20V. R
DS(ON)
= 150 m
@ V
GS
= 4.5V
R
DS(ON)
= 200 m
@ V
GS
= 2.5V
Low Gate Charge (3.7nC typ)
Compact industry standard SuperSOT
-6 package
Schottky:
VF < 0.45 V @ 1 A
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
Pin 1
SuperSOTTM-6
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
MOSFET Drain-Source Voltage
20
V
V
GSS
MOSFET Gate-Source Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
2.2 A
Pulsed
6
Power Dissipation for Single Operation
(Note 1a)
0.96 W
(Note 1b)
0.9
P
D
(Note 1c)
0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
V
RRM
Schottky Repetitive Peak Reverse Voltage
20 V
I
O
Schottky Average Forward Current
(Note 1a)
1 A
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
60
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.392
FDC6392S
7''
8mm
3000 units
FDC6392S
FDC6392S Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
16
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 12 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 12 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6 1.0 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
3
mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 2.2 A
V
GS
= 2.5 V, I
D
= 1.8 A
V
GS
=4.5 V, I
D
=2.2 A, T
J
=125
C
101
152
132
150
200
211
m
I
D(on)
OnState Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
6
A
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 2.2 A
6
S
Dynamic Characteristics
C
iss
Input
Capacitance
369
pF
C
oss
Output
Capacitance
80 pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
39 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
7.6
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
8
16
ns
t
r
TurnOn
Rise
Time
11
20
ns
t
d(off)
TurnOff
Delay
Time
13
23
ns
t
f
TurnOff
Fall
Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
4 8 ns
Q
g
Total
Gate
Charge
3.7
5.2
nC
Q
gs
GateSource
Charge
1
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V, I
D
= 2.2 A,
V
GS
= 4.5 V
1 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
0.8
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V,
I
S
= 0.8 A
(Note 2)
0.8
1.2
V
t
rr
Diode Reverse Recovery Time
5.4
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 2.2 A,
d
iF
/d
t
= 100 A/s
1.2 nC
Schottky Diode Characteristics
I
R
Reverse
Leakage
V
R
= 20 V
T
J
= 25
C
148
400
A
T
J
= 100
C
14 20 mA
V
R
= 10V
T
J
= 25
C
55
200
A
T
J
= 100
C
5.2
10 mA
V
F
Forward
Voltage
I
F
= 500mA
T
J
= 25
C
0.34
0.4 V
T
J
= 100
C
0.26
0.35
I
F
= 1 A
T
J
= 25
C
0.40
0.45 V
T
J
= 100
C
0.35
0.42
FDC6392S
FDC6392S Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 130
C/W when
mounted on a 0.125
in
2
pad of 2 oz.
copper.
b) 140C/W when mounted
on a .004 in
2
pad of 2 oz
copper
c) 180C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDC6392S
FDC6392S Rev C(W)
Typical Characteristics
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRAI
N-S
O
URCE
CURRE
NT (A)
V
GS
= -4.5V
-3.5V
-2.5V
-2.0V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
1
2
3
4
5
6
- I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= -2.0V
-3.5V
-4.5V
-3.0V
-2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= -2.2A
V
GS
= -4.5V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-RE
S
I
S
T
ANCE
(O
HM)
I
D
= -1.1A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURRE
NT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6392S
FDC6392S Rev C(W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
-V
GS
, G
A
T
E
-
S
O
URCE
V
O
L
T
A
G
E
(
V
)
I
D
= -2.2A
V
DS
= -5V
-10V
-15V
0
100
200
300
400
500
600
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
T
ANCE
(p
F
)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
0
0.1
0.2
0.3
0.4
0.5
V
F
, FORWARD VOLTAGE (V)
I
F
, FO
RWARD LE
AKAG
E
CURRE
NT (
A
)
T
J
= 25
o
C
T
J
= 125
o
C
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
, R
EVER
SE L
E
AKAG
E
CURRE
NT (A)
T
J
= 25
o
C
T
J
= 125
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
r
(t),
NORM
ALI
Z
E
D
E
FFE
CTI
V
E
TRANS
I
E
NT
T
H
ER
MA
L
R
ESI
ST
A
N
C
E
R
JA
(t) = r(t) + R
JA
R
JA
= 180 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDC6392S
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