January 2004
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)
FDC3616N
100V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Load Switching
Features
3.7 A, 100 V.
R
DS(ON)
= 70 m
@ V
GS
= 10 V
R
DS(ON)
= 80 m
@ V
GS
= 6.0 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (23nC typical)
High power and current handling capability
Fast switching speed.
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
100
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
3.7 A
Pulsed
20
Maximum Power Dissipation
(Note 1a)
2 W
P
D
(Note 1b)
1.1
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
C/W
(Note 1b)
111
R
JC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.616 FDC3616N
7''
8mm 3000
units
FDC3616N
FDC3616N Rev C1 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
Single Pulse,V
DD
= 50 V, I
D
=
3.7A
244
mJ
I
AR
Drain-Source Avalanche Current
3.7
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
A
100
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
114
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80 V, V
GS
= 0 V
10
A
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 30 V, V
GS
= 0 V
1
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2 2.5 4 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
7.4
mV/
C
R
DS(on)
Static DrainSource
On Resistance
V
GS
= 10 V, I
D
= 3.7 A
V
GS
= 6.0 V, I
D
= 3.5 A
V
GS
= 10 V, I
D
= 3.7 A, T
J
= 125
C
55
58
104
70
80
139
m
g
FS
Forward
Transconductance V
DS
= 10 V, I
D
= 3.7 A
19
S
Dynamic Characteristics
C
iss
Input
Capacitance
1215
pF
C
oss
Output
Capacitance
72
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
39 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.1
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
9
18
ns
t
r
TurnOn Rise Time
4
8
ns
t
d(off)
TurnOff Delay Time
28
45
ns
t
f
TurnOff
Fall
Time
V
DD
= 50 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
10 20 ns
Q
g
Total Gate Charge
23
32
nC
Q
gs
GateSource
Charge
4.8
nC
Q
gd
GateDrain
Charge
V
DS
= 50 V, I
D
= 3.7 A,
V
GS
= 10 V
5.4 nC
FDC3616N
FDC3616N Rev C1 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
t
rr
Diode Reverse Recovery Time
41
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.7 A,
d
iF
/d
t
= 100 A/s
107 nC
I
S
Maximum Continuous DrainSource Diode Forward Current
2.1
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.75
1.2 V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 60C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b) 111C/W
when
mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDC3616N
FDC3616N Rev C1 (W)
Typical Characteristics
0
5
10
15
20
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRENT (
A
)
5.0V
4.0V
V
GS
= 10V
4.5V
6.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.0V
6.0V
5.0V
4.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7 A
V
GS
= 10V
0.04
0.06
0.08
0.1
0.12
0.14
0.16
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
=1.85 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REVERSE DRAI
N CURRENT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC3616N
FDC3616N Rev C1 (W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=3.7A
V
DS
= 30V
70V
50V
0
300
600
900
1200
1500
1800
0
25
50
75
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 111
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 111C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NO
RMALIZE
D
E
FFE
CTIV
E
TRANS
IE
NT
THE
R
MAL RE
S
I
S
T
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 111 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC3616N
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