www.docs.chipfind.ru
November 2005
FDB8
878
N-
Channe
l Powe
rTrench
MOSFET
2005 Fairchild Semiconductor Corporation
FDB8878 Rev. A
www.fairchildsemi.com
1
FDB8878
N-Channel Logic Level PowerTrench
MOSFET
30V, 48A, 14m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 14m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 18m
, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
G
D
D
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
48
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
42
A
Pulsed (Note 4)
170
A
E
AS
Single Pulse Avalanche Energy (Note 1)
L = 1mH, I
AS
= 11A
60
mJ
L = 0.03mH,I
AS
= 38A
21
P
D
Power dissipation
47.3
W
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance, Junction to Case (Note 2)
3.7
o
C/W
R
JA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
43
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB8878
FDB8878
TO-263
13"
24mm
800 units
FDB8
878
N-
Channe
l Powe
rTrench
MOSFET
FDB8878 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
BV
DSS
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250
A,
Referenced to 25
o
C
21
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
-
-
1
A
V
GS
= 0V
T
A
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
= 20V
-
-
100
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
1.7
2.5
V
V
GS(TH)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250
A,
Referenced to 25
o
C
-5
mV/
o
C
r
DS(ON)
Drain to Source On Resistance
I
D
= 40A, V
GS
= 10V
-
12
14
m
I
D
= 36A, V
GS
= 4.5V
-
15
18
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
-
19
21
Dynamic Characteristics
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
927
1235
pF
C
OSS
Output Capacitance
-
188
250
pF
C
RSS
Reverse Transfer Capacitance
-
117
175
pF
R
G
Gate Resistance
f = 1MHz
3.0
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V V
DD
= 15V
I
D
= 40A
I
g
= 1.0mA
-
17.1
23
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
9.2
12
nC
Q
gs
Gate to Source Gate Charge
-
2.6
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
1.7
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
3.7
-
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 16
-
255
383
ns
t
d(ON)
Turn-On Delay Time
-
11.1
ns
t
r
Rise Time
-
244
ns
t
d(OFF)
Turn-Off Delay Time
-
14.8
ns
t
f
Fall Time
-
35.3
ns
t
OFF
Turn-Off Time
-
50
75
ns
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
-
1.1
1.25
V
I
SD
= 3.2A
-
0.85
1.2
V
t
rr
Reverse Recovery Time
I
SD
= 40A, dI
SD
/dt=100A/
s
-
14.4
18.8
ns
Q
RR
Reverse Recovered Charge
I
SD
= 40A, dI
SD
/dt=100A/
s
-
5.1
6.7
nC
Notes:
1: Starting T
J
= 25C, V
DD
= 30V, V
GS
= 10V
2: R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while R
JA
is determined by the user's board design.
3: R
JA
is measured with 1.0 in
2
copper on FR-4 board
4: Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDB8
878
N-
Channe
l Powe
rTrench
MOSFET
FDB8878 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
A
= 25C unless otherwise noted
Figure 1.
0
0.8
2.0
V
DS
, GATE TO SOURCE VOLTAGE (V)
0.4
1.2
1.6
20
30
50
80
0
I
D
, DRAIN TCU
RRE
NT (A)
70
60
40
10
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
10V
5.0V
4.5V
4.0V
3.5V
3.0V
On Region Characteristics
Figure 2.
0
40
I
D
, DRAIN CURRENT (A)
20
60
80
1.4
2.0
0.8
1.8
1.6
1.2
1.0
10V
5.0V
4.5V
4.0V
3.5V
3.0V
R
DS
(O
N
)
,
NO
RM
A
L
I
Z
ED
DRAIN TO SOURC
E ON-RE
S
I
STAN
CE
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2.2
2.4
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
- 80
40
160
T
J
, JUNCTION TEMPERATURE (
o
C)
0
- 40
80
120
200
1.1
1.5
0.7
R
DS
(O
N
)
,
NORMALIZE
D
DRAIN
TO S
O
URCE
ON-R
ES
ISTA
NCE
1.7
1.3
0.9
I
D
=
40A
V
GS
=10V
On Resistance Variation with
Temperature
Figure 4.
4
2
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.03
0.04
0.06
0.01
R
DS
(O
N)
, ON
-
R
ESI
STA
N
C
E
(
OH
M
)
0.05
0.03
I
D
=40A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
J
=25
o
C
T
J
=175
o
C
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5.
1.0
2.0
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
3.0
20
30
50
80
0
I
D
, DRAIN TCU
RRE
NT (A)
70
60
40
10
V
DS
= 6V
T
A
= 25
o
C
T
A
= -55
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
A
= 175
o
C
Transfer Characteristics
Figure 6.
V
SD
, BODY DIODE FORWARD VOLTAGE
0
0.6
1.5
0.9
1.2
0.3
0.1
1.0
100
0.001
I
S
, RE
VE
RS
E
CU
RRE
NT (A)
10
0.01
V
GS
= 0V
T
A
= 175
o
C
T
A
= 25
o
C
T
A
= - 55
o
C
Body Diode Forward Voltage Variation
With Source Current and Temperature
FDB8
878
N-
Channe
l Powe
rTrench
MOSFET
FDB8878 Rev. A
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteri
4
0
12
20
Q
g
, GATE CHARGE (nC)
8
16
4
6
10
0
V
GS
,
GATE- S
O
UR
CE
V
O
LTA
G
E
8
2
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
VDD =15V
stics
Figure 8. Capacitance Characteristics
100
1000
10000
0.1
10
30
10
C
OSS
C
RSS
C
ISS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANC
E (pF)
1
f = 1MHz
V
GS
= 0V
Figure 9. Unclamped Inductive Switching
Capability
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
100
10
1
0.001
0.01
0.1
1
10
100
I
AS
,
A
V
A
LANCHE
CURRE
NT (A
)
t
AV
, TIME IN AVALANCHE (ms)
Figure 10.
1
10
100
1000
1
10
100
DC
1ms
100
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
D
RAIN TCURRE
NT (A
)
10
s
0.1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
Safe Operating Area
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
0
75
150
V
DS
, GATE TO SOURCE VOLTAGE (V)
50
100
125
20
30
50
80
0
I
D
, DRAIN TCURR
ENT (
A
)
70
60
40
10
V
GS
= 10V
V
GS
= 4.5V
R
JC
= 3.17
o
C/W
175
Figure 12. Single Pulse Maximum Power
Dissipation
10
100
P
(P
K
)
, PE
AK TRAN
SIE
NT POW
E
R (W
)
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1000
10000
R
JC
= 0.5
o
C/W
T
J
= 25
o
C
SINGLE PULSE
Typical Characteristics
T
A
= 25C unless otherwise noted
Figure 13. Transient Thermal Response Curve
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, N
O
RM
ALIZED
THE
R
MAL IMP
E
D
ANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
FDB8
878
N-
Channe
l Powe
rTrench
MOSFET
FDB8878 Rev. A
www.fairchildsemi.com
5
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