2006 Fairchild Semiconductor Corporation
1
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
SuperFET
TM
July 2006
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
650V @T
J
= 150C
Typ. Rds(on)=0.81
Ultra low gate charge (typ. Qg=16nC)
Low effective output capacitance (typ. Coss.eff=32pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild's proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D-PAK
FCD Series
G
S
D
G
S
D
I-PAK
FCU Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FCD5N60 / FCU5N60
Unit
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
4.6
2.9
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
13.8
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
2.9
mJ
I
AR
Avalanche Current
(Note 1)
4.6
A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
54
0.43
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Thermal Characteristics
Symbol
Parameter
FCD5N60/FCU5N60
Unit
R
JC
Thermal Resistance, Junction-to-Case
2.3
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
83
C/W
*Drain current limited by maximum junction temperature
2
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCD5N60
FCD5N60TM
D-PAK
380mm
16mm
2500
FCD5N60
FCD5N60TF
D-PAK
380mm
16mm
2000
FCU5N60
FCU5N60
I-PAK
--
--
70
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A, T
J
= 25
C
600
--
--
V
V
GS
= 0V, I
D
= 250
A, T
J
= 150
C
--
650
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.6
--
V/
C
BV
DS
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 4.6A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 2.3A
--
0.81
0.95
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 2.3A
(Note 4)
--
3.8
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
470
600
pF
C
oss
Output Capacitance
--
250
320
pF
C
rss
Reverse Transfer Capacitance
--
22
--
pF
C
oss
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
--
12
--
pF
C
oss
eff.
Effective Output Capacitance
V
DS
= 0V to 400V, V
GS
= 0V
--
32
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300V, I
D
= 4.6A
R
G
= 25
(Note 4, 5)
--
12
30
ns
t
r
Turn-On Rise Time
--
40
90
ns
t
d(off)
Turn-Off Delay Time
--
47
95
ns
t
f
Turn-Off Fall Time
--
22
55
ns
Q
g
Total Gate Charge
V
DS
= 480V, I
D
= 4.6A
V
GS
= 10V
(Note 4, 5)
--
16
--
nC
Q
gs
Gate-Source Charge
--
2.8
--
nC
Q
gd
Gate-Drain Charge
--
7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.6
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
13.8
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 4.6A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 4.6A
dI
F
/dt =100A/
s
(Note 4)
--
295
--
ns
Q
rr
Reverse Recovery Charge
--
2.7
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 2.3A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
4.6A, di/dt 1200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
3
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250s Pulse Test
-55
o
C
150
o
C
25
o
C
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250s Pulse Test
2. T
C
= 25
o
C
I
D
, D
r
ain C
u
rr
e
n
t [
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250
s Pulse Test
-55
o
C
150
o
C
25
o
C
I
D
, Dr
a
i
n
Cu
rr
e
n
t
[A]
V
GS
, Gate-Source Voltage [V]
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
DS
(ON)
[
],
D
r
ai
n-
S
o
ur
ce O
n
-
R
e
si
st
ance
I
D
, Drain Current [A]
0
5
10
15
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
* Note : I
D
= 4.6A
V
GS
, Gate
-
S
ou
r
c
e V
o
lt
a
g
e
[V
]
Q
G
, Total Gate Charge [
o
C]
10
0
10
1
0
500
1000
1500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apaci
t
a
n
ce [
p
F
]
V
DS
, Drain-Source Voltage [V]
4
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
, (No
r
ma
lize
d)
Dr
a
i
n
-
S
o
urce Brea
kd
own Voltag
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 2.3A
R
DS
(ON
)
,
(Norm
a
l
i
z
ed)
D
r
ai
n-S
ourc
e
O
n
-Resi
s
t
a
nce
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
s
100 ms
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100
s
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
Dr
ain C
u
rr
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
T
C
, Case Temperature [
o
C]
1 0
- 5
1 0
- 4
1 0
- 3
1 0
- 2
1 0
- 1
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
* N o t e s :
1 . Z
J C
( t ) = 2 . 3
o
C / W M a x .
2 . D u t y F a c t o r , D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t )
s i n g l e p u l s e
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
JC
(t
),
Therm
a
l
R
e
spon
se
t
1
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
t
1
P
DM
t
2
5
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
8
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FCD5N60/FCU5N60 Rev. A0
F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
Package Dimensions
(Continued)
I-PAK
Dimensions in Millimeters
9
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F
CD5N60/FCU5N60 600V N-Cha
nnel MOSF
ET
FCD5N60/FCU5N60 Rev. A0
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intended to be an exhaustive list of all such trademarks.
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IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FAST
FASTrTM
FPSTM
FRFETTM
FACT Quiet SeriesTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TCMTM
TinyBoostTM
TinyBuckTM
TinyPWMTM
TinyPowerTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UniFETTM
UltraFET
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
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Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
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