2N4410
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N4410
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 50 mA. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
CBO
Collector-Base Voltage
120
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N4410
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
2N4410
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
80
V
V
(BR)CEX
Collector-Emitter Breakdown Voltage
I
C
= 500
A, V
BB
= 5.0 V
R
BE
= 8.2 k
120
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
120
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0, T
A
= 100
C
10
1.0
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
60
60
400
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
0.2
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
0.8
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 1.0 mA
0.8
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10 V, f = 100 kHz
12
pF
C
ib
Input Capacitance
V
EB
= 0.5 V, f = 100 kHz
50
pF
h
fe
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 10 V,
f = 30 MHz
2.0
10
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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