2N4126
MMBT4126
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents to 10
A as a switch and to 100
mA as an amplifier. Sourced from Process 66. See 2N3906 for
characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25C unless otherwise noted
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
25
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N4126
*MMBT4126
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
2N4126 / MMBT4126
C
B
E
TO-92
C
B
E
SOT-23
Mark: ZF
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
25
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 10
A, I
C
= 0
4.0
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
120
60
360
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.4
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.95
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
10
pF
C
cb
Collector-Base Capcitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
4.5
pF
h
fe
Small-Signal Current Gain
I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
120
480
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0 k
, f=10 Hz to 15.7 kHz
4.0
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
PNP General Purpose Amplifier
(continued)
2N4126 / MMBT4126
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