EMS101-C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
PRELIMINARY DATA SHEET
ISSUED DATE: 07-18-03
DC 6GHz GaAs MMIC SPDT SWITCH
FEATURES
BROADBAND PERFORMANCE
HIGH ISOLATION
LOW INSERTION LOSS
LOW DC POWER CONSUMPTION
FAST SWITCHING SPEED
SI3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH RELIABILITY
Description
The EMS101-C is a GaAs IC single pole double throw broadband RF switch chip. It can be used for
broadband communications and instrument application. The RF outputs can be terminated with 50ohm
load or short circuit. The switch is controlled by 0V/-5V signals to the control lines in accordance with
the truth tables below.
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOL PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
F
Operating frequency Range
DC
6
GHz
0/-5V Control; 50MHz
21
dBm
P1dB Input Power at 1dB
Gain compression 0/-5V Control; 2Ghz
27
Insertion Loss
(DC-3GHz)
0.9
1.3
dB
ILs
(3-6GHz)
1.2
1.8
dB
Isolation
(DC-3GHz)
33
38
dB
ISO
(3-6GHz)
30
32
dB
RL in Input Return Loss
14
16
dB
RL out Output Return Loss
15
18
dB
T
Switching Speed (50% control to 10%/90%RF)
3
8
nS
IP3
Third Order Intercept
46
dBm
Notes:
1. All measurements made in a 50ohm system.
2. P1dB measured input power at which insertion loss compressed by 1 dB.
3. Return Loss measured in low loss switch state
EMS101-C
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
PRELIMINARY DATA SHEET
ISSUED DATE: 07-18-03
DC 6GHz GaAs MMIC SPDT SWITCH
Chip Outline
Dimensions indicated in um.
All bonding pads are 100umx100um.
Electrical Schematic
Switching Truth Table
1&2 3&4
IN-OUT1
IN-OUT2
0V -5V
Low
loss
Isolated
-5V 0V
Isolated
Low
loss
Absolute maximum Rating
RF input power 31dBm
Operating temperature -40
o
C to +85
o
C
Storage temperature -65
o
C to 150
o
C
IN
3
T
1
OUT2
R
OUT1
T
4
R
2
Ground R: Reflective
Ground T: Terminated
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