EMP212
UPDATED
11/24/2004
9.50 12.0 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
FEATURES
9.5 12.0 GHz Operating Frequency
30.5dBm Output Power at 1dB Compression
17 dB Typical Power Gain
41dBc OIMD3 @ EACH TONE Pout 19dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2500um X 1600um
Thickness: 85um 15um
ELECTRICAL CHARACTERISTICS (T
a
= 25
C, Vdd=7V, Idsq=800mA)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9.5
12.0
GHz
P
1dB
Output Power at 1dB Gain Compression 29.0
30.5
dBm
Gss
Small Signal Gain
14
17
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 19dBm
Ids= 60%10%Idss
-41
-38
dBc
Input RL
Input Return Loss
-10
-7
dB
Output RL
Output Return Loss
-8
-5
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
950
1250
1500
mA
Vdd
Drain Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8.5
o
C/W
Tb
Operating Base Plate Temperature
-35
+85
C
MAXIMUM RATINGS AT 25C
1,2
SYMBOL CHARACTERISTIC
ABSOLUTE CONTINUOUS
V
DS
Drain to Source Voltage
12V
8 V
V
GS
Gate to Source Voltage
-8V
-4 V
I
DD
Drain
Current
Idss
1300mA
I
GSF
Forward Gate Current
114mA
19mA
P
IN
Input Power
27dBm
@ 3dB compression
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/175C
-65/150C
P
T
Total
Power
Dissipation
12.4W
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
<(T
CH
T
HS
)/R
TH
; where T
HS
=Operating Base Plate temperature
EMP212
UPDATED
11/24/2004
9.50 12.0 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised December 2004
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line
and separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 2500 x 1600 microns
Chip Thickness: 85
15 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
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