EMP103B
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DATA SHEET
ISSUED DATE: 02-24-04
6.4 8.0 GHz Power Amplifier MMIC
FEATURES
6.4 8.0 GHz Bandwidth
33dBm Output Power at 1dB Compression
14 dB Typical Power Gain
APPLICATIONS
Point-to-point and point-to-multipoint radio
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
F
Operating Frequency Range
6.4
8.0
GHz
P
1dB
Output Power at 1dB Gain Compression
32.7
dBm
Gss
Small Signal Gain
13
15
dB
IP3
Third Order Intercept
43
dBm
Input RL
Input Return Loss
10
15
dB
Output RL Output Return Loss
6
dB
Idd
Power Supply Current
950
mA
Vdd
Power Supply Voltage
10
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4 V
I
DD
Drain
Current
Idss
I
GSF
Forward Gate Current
35mA
P
IN
Input Power
@ 3dB compression
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/150C
P
T
Total
Power
Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V
DS
*I
DS
< (T
CH
T
HS
)/R
TH
; where T
HS
= ambient temperature
EMP103B
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
DATA SHEET
ISSUED DATE: 02-24-04
6.4 8.0 GHz Power Amplifier MMIC
ASSEMBLY DRAWING
CHIP OUTLINE
TYPICAL
PERFORMANCE
5
6
7
8
9
Frequency (GHz)
Small Signal Performance
-20
-15
-10
-5
0
5
10
15
20
dB[S21]
dB[S11]
dB[S22]
Data
measured
@
Vd=10V,
Id=950mA
Chip size: 3000x2200microns
Chip thickness: 75 + 13 microns
All Dimensions in Microns
P1dB performance
30
30.5
31
31.5
32
32.5
33
33.5
34
34.5
35
5
6
7
8
9
Frequency (GHz)
dB
m
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