ChipFind - документация

Электронный компонент: EMA112-SOT89

Скачать:  PDF   ZIP
EMA112-SOT89
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2004
PRELIMINARY DATA SHEET
ISSUED DATE: 02-09-04
0.5-3.0 GHz High Linearity Power MMIC
FEATURES
LOW COST SURFACE-MOUNT PLASTIC
PACKAGE
0.5-3.0 GHz BANDWIDTH
+28.0dBm TYPICAL OUTPUT POWER
41dBm OIP3
15.0dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC Tested
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
0.5
3
GHz
P
1dB
Power at 1dB Compression V
DD
= 8.0V, F=2.4G
27.0
28.0
dBm
G
SS
Small Signal Gain V
DD
= 8.0V, F=2.4G
13.0
15.0
dB
OIMD3
Output 3
rd
Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 18dBm
V
DD
= 8.0V, F=2.4G
-46 -43 dBc
NF
Noise Figure V
DD
= 8.0V, F=2.4G
2.7
3.2
dB
RL
IN
Input Return Loss
V
DD
= 8.0V, F=2.4G
8
10
dB
RL
OUT
Output Return Loss
V
DD
= 8.0V, F=2.4G
8
10
dB
I
DD
Power Supply Current
170
210
250
mA
R
TH
Thermal Resistance
1
35
o
C/W
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DD
Power Supply Voltage
8 V
I
DD
Drain
Current
IDSS
I
GSF
Forward Gate Current
10 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
2.8 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
T
HS
)/R
TH
; where T
HS
= temperature of heatsink,
and P
T
= (V
DD
* I
DD
) (P
OUT
P
IN
).
All Dimensions in Mils
EMA112-SOT89
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2004
PRELIMINARY DATA SHEET
ISSUED DATE: 02-09-04
PERFORMANCE DATA
Small Signal Performance
V
DD
= 6.5V Ids = 210mA
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Frequency (GHz)
Small Signal Gain
0
5
10
15
20
DB(|S[2,1]|) *
0.5
1.5
2.5
3.5
4.5
5
Frequency (GHz)
Input and Output Return Loss
-20
-15
-10
-5
0
DB(|S[1,1]|) *
DB(|S[2,2]|) *

Power and Gain Performance

OIP3 VS Pout (f=10MHz)





OIP3 VS Pout @2.4GHz
20
25
30
35
40
45
10
15
20
25
Each Tone Pout (dBm)
OI
P
3
(
d
B
m
)
VD: 5.5V
VD: 6.5V
VD: 8V
OIP3 VS Pout @900MHz
20
25
30
35
40
45
0
5
10
15
20
25
Each Tone Pout (dBm)
OI
P
3
(
d
B
m
)
VD 8V
VD 6.5V
VD 5.5V
VD 5V
P-1 VS VD
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P
out (
d
B
m
)
5.5V
6.5V
8V
G-1 VS VD
0
3
6
9
12
15
18
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
G-
1
(
d
B
)
5.5V
6.5V
8V
EMA112-SOT89
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2004
PRELIMINARY DATA SHEET
ISSUED DATE: 02-09-04
Power, Gain and OIP3 VS Temperature
P-1 VS Temperature
@8V, 200mA
25
26
27
28
29
30
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
P-
1
(
d
B
m
)
25C
-35C
80C
G-1 VS Temperature
@8V, 200mA
0
2
4
6
8
10
12
14
16
18
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
G-1
(
d
B
)
25C
-35C
80C
OIP3 VS Temperature
@8V, 200mA
20
25
30
35
40
45
0
5
10
15
20
25
Each Tone Pout (dBm)
OI
P
3
(
d
B
m
)
25C
-35C
80C
(Temperature is test fixture temperature; OIP3 is measured @2GHz, f=10MHz)

Noise Figure Performance
NF VS Vd
@900MHz
1
1.4
1.8
2.2
2.6
3
2
3
4
5
6
7
8
9
Vd (V)
NF
(
d
B
)
NF (dB)
NF VS Frequency
@5V, 185mA
0
0.5
1
1.5
2
2.5
3
3.5
0.5
1
1.5
2
2.5
3
Frequency (GHz)
NF
(
d
B)
NF (dB)






EMA112-SOT89
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised February 2004
PRELIMINARY DATA SHEET
ISSUED DATE: 02-09-04
S-Parameters
V
DD
= 6.5V, I
DD
= 210mA
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1 0.13
-85.75
6.83
163.81
0.07 4.70 0.24
-150.57
0.2
0.13
-96.17
6.64
158.26
0.07
-7.02
0.24
-157.69
0.3 0.17
-104.25
6.52
150.62
0.07 -10.25 0.26 -155.71
0.4
0.20
-113.03
6.38
142.83
0.07
-13.66
0.28
-154.76
0.5 0.23
-121.74
6.21
134.81
0.07 -19.58 0.30 -154.56
1
0.39
-151.85
5.33
97.37
0.07
-41.89
0.37
-160.40
1.5 0.38
-172.92
5.18 67.78 0.07 -63.83 0.32 -172.10
2
0.37
151.69
4.90
34.12
0.07
-93.92
0.30
160.63
2.5 0.31 86.02 4.65 -4.11 0.06 -133.85 0.22 120.36
3
0.50
10.90
3.85
-46.38
0.05
-178.92
0.13
34.23
3.5 0.70 -23.51 2.77 -82.13 0.04 139.37 0.22 -43.18
4
0.79
-40.23
2.04
-109.72
0.03
112.88
0.31
-69.34
4.5 0.80
-53.26
1.63
-134.29 0.03 96.20 0.37 -85.95
5
0.77
-72.14
1.42
-161.88
0.04
82.14
0.40
-104.95
5.5 0.69
-104.59
1.22
164.08 0.05 63.14 0.44 -129.90
6
0.69
-144.66
0.94
127.04
0.05
46.48
0.50
-159.41
6.5 0.78
-177.27
0.66 95.16 0.05 48.04 0.55 179.89
7
0.82
179.62
0.48
70.18
0.06
46.29
0.62
146.25
7.5 0.78
-179.81
0.39 49.13 0.09 41.72 0.69 116.45
8
0.66
171.50
0.37
17.89
0.16
6.74
0.69
93.44
8.5 0.67 148.42 0.24 -10.25 0.08 -38.85 0.76 78.17
9
0.69
92.72
0.23
-36.22
0.11
-34.89
0.78
58.76
9.5 0.69 54.41 0.19
-75.39 0.13 -80.02 0.76 47.15
10
0.71
40.74
0.13
-126.59
0.11
-140.75
0.76
43.81
Evaluation Board:
R2
0306
0ohm
33nH
22pF
1000pF
0508
0.1uF
C1
Size
Value
Comp.
R3
C1
R1
C2
C3
L1
VD
C4
1. MATERIAL: FR4, 0.031 INCH THICK
2. ALL DIMENSIONS ARE IN INCHES
C5
C2
C3
C4
C5
L1
R1
R2
R3
0ohm
0ohm
100pF
100pF
0306
0306
0306
0306
0508
0508
0508