EIC4450-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
4.4-5.0 GHz 8-Watt Internally-Matched Power FET
FEATURES
4.4 5.0 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10.5 dB Power Gain at 1dB Compression
36% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
DESCRIPTION
The EIC4450-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics' unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 4.4-5.0 GHz
V
DS
= 10 V, I
DSQ
2200 mA
38.5 39.5
dBm
G
1dB
Gain at 1dB Compression
f = 4.4-5.0 GHz
V
DS
= 10 V, I
DSQ
2200 mA
9.5 10.5
dB
G
Gain Flatness f = 4.4-5.0 GHz
V
DS
= 10 V, I
DSQ
2200 mA
0.6
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
2200 mA
f = 4.4-5.0 GHz
36 %
Id
1dB
Drain Current at 1dB Compression
f = 4.4-5.0 GHz
2200
2600
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
65% IDSS f = 5.0 GHz
-43 -46 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
4000
4500
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 40 mA
-2.5
-4.0
V
R
TH
Thermal Resistance
3
3.5
4.0
o
C/W
Notes:
1.
Tested with 100 Ohm gate resistor.
2.
S.C.L. = Single Carrier Level.
3.
Overall Rth depends on case mounting.
EIC4450-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
0
1.0
1.0
-1.0
10.0
10.0
-1
0.0
5.0
5.0
-5
.0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.
2
-0.
2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.8
S11 and S22
Swp Max
5.2GHz
Swp Min
4.2GHz
S[1,1]
EIC4450-8
S[2,2]
EIC4450-8
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL CHARACTERISTIC
VALUE
V
DS
Drain to Source Voltage
10 V
V
GS
Gate to Source Voltage
-4.5 V
I
DS
Drain
Current
IDSS
I
GSF
Forward Gate Current
80 mA
P
IN
Input Power
@ 3dB compression
P
T
Total Power Dissipation
32 W
T
CH
Channel
Temperature
150C
T
STG
Storage
Temperature
-65/+150C
Notes:
1.
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2.
Bias conditions must also satisfy the following equation P
T
< (T
CH
T
PKG
)/R
TH
; where T
PKG
= temperature of package, and
P
T
= (V
DS
* I
DS
) (P
OUT
P
IN
).
PERFORMANCE DATA
Typical S-Parameters (T= 25C, 50
system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
2200mA
4.2
4.4
4.6
4.8
5
5.2
Frequency (GHz)
S21 and S12
-30
-20
-10
0
10
20
S
21
and S
1
2
(
d
B
)
DB(|S[2,1]|)
EIC4450-8
DB(|S[1,2]|)
EIC4450-8
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
4.0 0.7503
-37.83 2.703 97.27 0.0555 43.87 0.3563 -105.99
4.2
0.6786
-66.68
3.0738
66.41
0.0662
11.77
0.3648
-142.14
4.4 0.5779
-101.09
3.5153
32.39 0.0788 -21.55 0.3889 178.7
4.6
0.4132
-146.28
3.9355
-6.5
0.0954
-60.58
0.4149
132.78
4.8 0.2292 134.17 4.0571 -50.3 0.1033 -105.97 0.4326 78.67
5.0
0.308
19.37
3.6482
-96.93
0.0989
-153.5
0.4399
20.6
5.2 0.5127
-39.49 2.78 -140.48 0.0854 160.93 0.4385 -30.72
5.4
0.6658
-77.6
1.9617
-177.01
0.0678
119.63
0.4493
-70.46
5.6 0.7585
-107.39
1.3733
153.13 0.0532 81.38 0.4784 -98.19
5.8
0.8058
-133.11
1.0074
126.36
0.0414
46.84
0.5605
-121.4
6.0 0.8356
-155.36
0.7453
101.98 0.0333 18.09 0.6098 -141.51
EIC4450-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
0
4
8
12
16
20
24
28
32
36
0
25
50
75
100
125
150
Case Temperature (C)
T
o
t
a
l
P
o
we
r
Di
s
s
i
p
a
t
i
o
n
(
W
)
Safe Operating
Region
Potentially Unsafe
Operating Region
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
IM3
Pout
Pin
IP
3
= Pout + IM3/2
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
P
out
[
S
.C
.
L
.]
(
d
Bm)
IM3
Typical Power Data (V
DS
= 10 V, I
DSQ
= 2200 mA)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
65% IDSS
)
P-1dB & G-1dB vs Frequency
36
37
38
39
40
41
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
Frequency (GHz)
P-
1
d
B (
d
Bm
)
9
10
11
12
13
14
G
-
1dB
(
d
B
)
P-1dB (dBm)
G-1dB (dB)
IM3 vs Output Power
f1 = 5.00 GHz, f2 = 5.01 GHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
23
24
25
26
27
28
29
30
31
32
33
34
Pout [S.C.L.] (dBm)
IM
3
(d
Bc
)
IM3 (dBc)
EIC4450-8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 4 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised October 2003
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
SN
Excelics
YM
ORDERING INFORMATION
Part Number
Grade
1
f
Test
(GHz)
P
1dB
(min)
IM
3
(min)
2
EIC4450-8 Industrial 4.4-5.0
GHz 38.5
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in "Electrical Characteristics" table.
EIC4450-8
SOURCE
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