EIA1114-4
UPDATED
07/25/2006
11.0-14.0GHz 4-Watt Internally Matched Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised July 2006
FEATURES
11.0
14.0GHz
Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-36 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
YYWW
ALL DIMENSIONS IN INCHES
.512
.382
.094
Excelics
.650.008
.129
SN
GATE
.060 MIN.
.045
.070 .008
.004
.022
.060 MIN.
DRAIN
.319
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
1500mA
35.5 36.5 dBm
G
1dB
Gain at 1dB Compression f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
1500mA
6.0 7.0 dB
G
Gain Flatness f = 11.0-14.0GHz
V
DS
= 8 V, I
DSQ
1500mA
0.8
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DSQ
1500mA f = 11.0-14.0GHz
25 %
Id
1dB
Drain Current at 1dB Compression f = 11.0-14.0GHz
1700
2000
mA
IM3
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 8 V, I
DSQ
65% IDSS f = 14.0GHz
-36 dBc
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
2880
3600
mA
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 29 mA
-1.0
-2.5
V
R
TH
Thermal Resistance
3
5.5
6.0
o
C/W
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10
8V
Vgs
Gate-Source Voltage
-5
-3V
Igsf
Forward Gate Current
43.2mA 14.4mA
Igsr
Reverse Gate Current
-7.2mA -2.4mA
Pin
Input Power
35.5dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65 to +175
o
C
-65 to +175
o
C
Pt
Total Power Dissipation
25W 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EIA1114-4
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