Excelics
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+33.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
High BVgd FOR 10V BIAS
0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
32.0 33.5
33.5
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
16.0 18.0
12.5
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f= 2GHz
40
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
640
960
1440
mA
Gm
Transconductance Vds=3V, Vgs=0V
200
560
mS
Vp
Pinch-off Voltage Vds=3V, Ids=10mA
-2.5
-4.0
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-15
-20
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-10
-17
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
12
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
960mA
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
@3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
'
'
*
*
6
6
6
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq ---S11--- ---S21--- ---S12--- ---S22---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.500 0.937 -106.2 10.161 120.8 0.022 35.8 0.518 -166.8
1.000 0.897 -134.9 6.389 104.7 0.028 26.4 0.505 -168.3
1.500 0.897 -151.8 4.443 93.5 0.028 21.5 0.524 -171.2
2.000 0.897 -161.0 3.370 85.4 0.029 19.0 0.533 -173.0
2.500 0.898 -167.2 2.695 79.2 0.030 20.2 0.539 -173.8
3.000 0.895 -171.8 2.231 73.9 0.030 19.5 0.542 -174.2
3.500 0.890 -175.4 1.894 69.4 0.030 20.9 0.542 -173.9
4.000 0.850 -176.6 1.654 66.9 0.026 27.6 0.560 -172.2
4.500 0.901 177.7 1.535 59.9 0.032 23.1 0.607 -169.5
5.000 0.899 174.5 1.357 55.2 0.031 25.8 0.617 -170.8
5.500 0.900 172.5 1.208 51.4 0.031 28.1 0.620 -171.8
6.000 0.901 170.8 1.087 48.2 0.031 30.4 0.619 -172.8
6.500 0.902 169.6 0.999 45.8 0.032 32.0 0.616 -172.6
7.000 0.893 168.8 0.941 43.3 0.033 37.1 0.637 -171.2
7.500 0.904 170.7 0.916 39.2 0.037 34.8 0.669 -172.8
8.000 0.919 169.5 0.840 34.2 0.036 35.0 0.681 -175.0
8.500 0.918 169.2 0.783 31.0 0.038 36.6 0.693 -176.9
9.000 0.924 168.7 0.729 27.9 0.037 37.6 0.701 -178.6
9.500 0.927 168.0 0.687 24.5 0.038 39.8 0.706 -179.3
10.000 0.932 167.3 0.647 22.3 0.040 42.4 0.716 179.8
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
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