960
50
120
48
95
40
156
420
45
110
D
G
D
D
D
G
G
G
Excelics
EFA480B/EFA480BV
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+34.0dBm TYPICAL OUTPUT POWER
6.0dB TYPICAL POWER GAIN FOR EFA480B AND
7.5dB FOR EFA480BV AT 12GHz
0.5X 4800 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA480BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
EFA480B
EFA480BV
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
P
1dB
Output Power at 1dB Compression f=8GHz
Vds=8V, Ids=50% Idss f=12GHz
32.0
34.0
34.0
32.0
34.0
34.0
dBm
G
1dB
Gain at 1dB Compression f=8GHz
Vds=8V, Ids=50% Idss f=12GHz
4.5
10.0
6.0
5.0
12.0
7.0
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
32
36
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
800
1360
1760
800
1360
1760
mA
Gm
Transconductance Vds=3V, Vgs=0V
560
720
560
720
mS
Vp
Pinch-off Voltage Vds=3V, Ids=10mA
-2.0
-3.5
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12
-15
-12
-15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
10
8
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA480B
EFA480BV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
1.4A
Idss
1.75A
Igsf
Forward Gate Current
120mA
20mA
120mA
20mA
Pin
Input Power
32dBm
@ 3dB
Compression
32dBm
@ 3dB
Compression
Tch
Channel Temperature
175
o
C
150
o
C
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
14W
11W
17W
14W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 60
10 microns
All Dimensions In Microns
: Via Hole No Via Hole For EFA480B
EFA480B/EFA480BV
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
EFA480B 8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.0
0.944
-149.6
6.808
97.1
0.021
20.4
0.444
-166.1
2.0
0.940
-165.7
3.472
80.6
0.022
17.4
0.481
-167.7
3.0
0.946
-172.1
2.290
69.2
0.022
20.0
0.514
-166.7
4.0
0.950
-176.7
1.685
59.5
0.021
24.8
0.554
-165.3
5.0
0.954
179.6
1.281
51.0
0.020
31.0
0.605
-164.3
6.0
0.956
176.5
1.040
43.1
0.020
38.9
0.643
-162.5
7.0
0.959
173.5
0.864
36.1
0.021
44.2
0.682
-161.0
8.0
0.961
170.7
0.728
29.9
0.021
50.4
0.710
-159.0
9.0
0.965
169.0
0.620
24.4
0.023
55.5
0.733
-158.2
10.0
0.968
169.5
0.538
20.0
0.024
63.4
0.753
-158.5
11.0
0.970
171.2
0.480
15.1
0.026
63.9
0.777
-162.5
12.0
0.968
172.1
0.428
10.2
0.029
65.8
0.794
-165.8
14.0
0.966
168.4
0.348
0.2
0.033
63.5
0.835
-170.5
16.0
0.963
165.6
0.290
-11.1
0.035
56.8
0.871
-179.3
18.0
0.960
154.2
0.238
-23.5
0.036
46.7
0.901
176.7
20.0
0.964
146.1
0.194
-34.0
0.039
40.8
0.920
171.6
22.0
0.965
138.6
0.154
-43.1
0.042
35.7
0.931
168.0
24.0
0.971
139.0
0.117
-45.2
0.044
36.9
0.946
165.8
26.0
0.968
148.0
0.089
-41.9
0.050
39.7
0.950
158.4
EFA480BV 8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.0
0.939
-132.8
6.946
105.6
0.024
22.8
0.504
-165.9
2.0
0.943
-157.5
3.642
86.7
0.026
11.2
0.519
-167.8
3.0
0.938
-167.3
2.433
74.8
0.025
6.2
0.555
-167.4
4.0
0.945
-173.1
1.802
65.2
0.024
4.7
0.580
-166.3
5.0
0.944
179.1
1.430
56.0
0.022
2.9
0.608
-161.9
6.0
0.950
175.5
1.170
47.9
0.021
2.8
0.635
-162.0
7.0
0.952
174.3
0.976
41.1
0.020
3.6
0.664
-163.4
8.0
0.955
173.8
0.827
34.2
0.019
4.4
0.691
-167.0
9.0
0.961
173.5
0.707
27.6
0.017
7.2
0.723
-170.3
10.0
0.963
172.8
0.601
23.5
0.016
6.4
0.764
-169.0
11.0
0.971
172.1
0.535
15.9
0.016
10.5
0.767
-174.8
12.0
0.973
171.6
0.468
10.4
0.015
16.2
0.789
-177.6
14.0
0.979
170.1
0.364
1.5
0.014
19.3
0.834
-178.8
16.0
0.975
166.5
0.294
-8.8
0.014
15.6
0.865
178.1
18.0
0.982
163.0
0.248
-17.1
0.015
18.0
0.891
177.3
20.0
0.980
160.4
0.217
-26.0
0.016
18.1
0.906
172.9
22.0
0.972
156.2
0.188
-35.3
0.017
14.6
0.920
168.5
24.0
0.972
155.8
0.159
-42.5
0.019
18.0
0.937
161.4
26.0
0.976
152.7
0.137
-50.4
0.022
22.6
0.945
156.1
Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EFA480BV.
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