Excelics
EFA025AL
DATA SHEET
High Gain GaAs Power FET
+20.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
17.0 20.0
20.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
9.5 11.5
9.0
dB
PAE
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
38
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
20
45
65
mA
Gm
Transconductance Vds=3V, Vgs=0V
30
50
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0mA
-1.5
-2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
155
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
19dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
50
48
50
40
59
78
104
420
260
90
D
D
G
G
S
S
EFA025AL
DATA SHEET
High Gain GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.990 -19.8 5.439 163.7 0.014 78.3 0.787 -7.4
2.0 0.970 -38.4 5.095 150.4 0.027 68.7 0.772 -14.1
3.0 0.927 -55.0 4.719 137.3 0.037 58.7 0.751 -20.6
4.0 0.895 -69.0 4.328 126.3 0.043 52.7 0.727 -26.3
5.0 0.862 -81.3 3.961 116.0 0.049 45.8 0.709 -32.1
6.0 0.838 -91.8 3.630 107.0 0.051 41.8 0.692 -37.1
7.0 0.815 -101.4 3.327 98.8 0.054 37.2 0.681 -42.0
8.0 0.802 -110.2 3.078 90.9 0.055 33.0 0.675 -46.6
9.0 0.779 -118.3 2.822 83.7 0.056 28.4 0.663 -51.0
10.0 0.769 -125.4 2.613 77.3 0.053 25.0 0.655 -54.8
11.0 0.765 -132.3 2.436 71.1 0.052 23.8 0.651 -58.5
12.0 0.764 -139.0 2.285 64.8 0.051 22.4 0.645 -62.0
13.0 0.769 -144.9 2.150 58.9 0.051 20.1 0.636 -65.3
14.0 0.771 -150.5 2.032 53.3 0.050 19.7 0.628 -69.1
15.0 0.779 -155.4 1.945 47.5 0.051 20.2 0.619 -73.7
16.0 0.781 -159.8 1.852 41.3 0.053 20.5 0.614 -79.6
17.0 0.786 -163.1 1.783 35.8 0.056 19.3 0.593 -86.9
18.0 0.793 -166.7 1.732 29.6 0.061 17.0 0.580 -95.4
19.0 0.794 -170.0 1.674 22.7 0.063 16.1 0.577 -105.2
20.0 0.786 -173.1 1.607 15.7 0.067 14.6 0.582 -116.6
21.0 0.773 -175.2 1.505 9.1 0.070 12.7 0.590 -128.3
22.0 0.762 -177.7 1.437 3.0 0.071 13.3 0.604 -138.3
23.0 0.763 -179.9 1.368 -2.4 0.076 16.5 0.637 -146.1
24.0 0.762 176.7 1.305 -8.5 0.083 16.6 0.678 -153.2
25.0 0.759 173.1 1.235 -14.3 0.088 16.8 0.703 -158.7
26.0 0.753 170.5 1.168 -18.0 0.092 17.9 0.721 -161.8
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
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