I
C, nom
3600
A
I
C
4700
A
min.
typ.
max.
-
1,7
2,15
V
-
2
t.b.d.
V
mA
-
5
nA
-
-
C
res
collector emitter cut off current
I
CES
revision: 2.0
gate emitter peak voltage
Kollektor Emitter Sttigungsspannung
I
C
= 3600A, V
GE
= 15V, T
vj
= 25C,
I
FRM
repetitive peak forward current
t
p
= 1ms
RMS, f= 50Hz, t= 1min.
It value
It
V
ISOL
V
CES
A
I
CRM
V
7200
1200
Technische Information / technical information
FZ3600R12KE3
IGBT-Module
IGBT-Modules
Periodischer Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Christoph Lbke
repetitive peak collector current
t
p
= 1ms, T
c
= 80C
Periodischer Kollektor Spitzenstrom
Dauergleichstrom
T
c
= 25C
DC collector current
Transistor Wechselrichter / transistor inverter
collector emitter satration voltage
date of publication: 2002-07-29
Gate Schwellenspannung
I
C
= 144mA, V
CE
= V
GE
, T
vj
= 25C,
Eingangskapazitt
prepared by: MOD-D2; Mark Mnzer
Rckwirkungskapazitt
reverse transfer capacitance
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25C,
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Reststrom
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
T
c
= 70C
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
nF
-
12
V
nF
258
-
35
-
C
V
1540
k As
kV
7200
A
P
tot
A
DC forward current
+/- 20
T
c
= 25C; Transistor
I
F
3600
14,8
kW
V
GES
6,5
5,8
2,5
C
ies
5
Q
G
-
-
V
GE(th)
gate threshold voltage
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
Grenzlastintegral
insulation test voltage
I
C
= 3600A, V
GE
= 15V, T
vj
= 125C,
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
Gateladung
V
GE
= -15V...+15V; V
CE
=...V
gate charge
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
400
-
preliminary data
vorlufige Daten
T
vj
= 25C
1 (8)
DB_FZ3600R12KE3_2.0.xls
2002-07-29
Technische Information / technical information
FZ3600R12KE3
IGBT-Module
IGBT-Modules
preliminary data
vorlufige Daten
min.
typ.
max.
-
0,60
-
s
-
0,66
-
s
-
0,23
-
s
-
0,22
-
s
-
0,82
-
s
-
0,96
-
s
-
0,15
-
s
-
0,18
-
s
-
2,2
2,8
V
-
2
-
V
-
1165
-
A
-
1800
-
A
-
170
-
C
-
405
-
C
-
54
-
mJ
-
105
-
mJ
735
570
-
mJ
-
mJ
Transistor Wechselrichter / transistor inverter
t
r
-
I
C
= 3600A, V
CC
= 600V
t
d,off
V
GE
=15V, R
Goff
=0,2
W, T
vj
=25C
V
GE
=15V, R
Goff
=0,2
W,T
vj
=125C
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
Anstiegszeit (induktive Last)
rise time (inductive load)
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE
=15V, R
Gon
=0,8
W, T
vj
=125C
I
C
= 3600A, V
CC
= 600V
V
GE
=15V, R
Gon
=0,8
W, T
vj
=25C
I
C
= 3600A, V
CC
= 600V
V
GE
=15V, R
Gon
=0,8
W, T
vj
=25C
V
GE
=15V, R
Gon
=0,8
W, T
vj
=125C
Charakteristische Werte / characteristic values
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 25C
Diode Wechselrichter / diode inverter
E
off
V
GE
=15V, R
Goff
=0,2
W, T
vj
=125C
R
CC/EE
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
forward voltage
Rckstromspitze
peak reverse recovery current
I
RM
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
I
F
=I
C,nom
, -di
F
/dt= 16200A/s
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 125C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
V
F
Durchlassspannung
-
-
t
f
-
t
d,on
I
C
= 3600A, V
CC
= 600V, L
s
= 20nH
V
GE
=15V, R
Gon
=0,8
W, T
vj
=125C
E
on
T
c
= 25C
m
W
Charakteristische Werte / characteristic values
Kurzschlussverhalten
t
P
10s, V
GE
15V, T
Vj
125C
I
SC
-
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
sCE
di/dt
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
I
F
=I
C,nom
, -di
F
/dt= 16200A/s
Sperrverzgerungsladung
recoverred charge
I
F
=I
C,nom
, -di
F
/dt= 16200A/s
I
C
= 3600A, V
CC
= 600V
V
GE
=15V, R
Goff
=0,2
W, T
vj
=25C
V
GE
=15V, R
Goff
=0,2
W,T
vj
=125C
turn off energy loss per pulse
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 3600A, V
CC
= 600V, L
s
= 20nH
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
-
nH
stray inductance module
Modulindiktivitt
L
sCE
-
10
14400
-
A
0,12
2 (8)
DB_FZ3600R12KE3_2.0.xls
2002-07-29
Technische Information / technical information
FZ3600R12KE3
IGBT-Module
IGBT-Modules
preliminary data
vorlufige Daten
min.
typ.
max.
R
thJC
-
-
0,0084
K/W
R
thJC
-
-
0,014
K/W
K/W
-
0,004
-
Schraube / screw M5
internal insulation
CTI
creepage distance
Luftstrecke
pro Diode / per Diode, DC
thermal resistance, junction to case
Innerer Wrmewiderstand
pro Transistor / per transistor, DC
bergangs Wrmewiderstand
R
thCK
pro Modul / per module
l
Paste
/
l
grease
=1W/m*K
g
weight
2,3
Nm
G
Gehuse, siehe Anlage
2250
Gewicht
M
-
Anschlsse / terminal M4
Anschlsse / terminal M8
5,75
>400
4,25
-
Al
2
O
3
case, see appendix
Innere Isolation
comperative tracking index
Thermische Eigenschaften / thermal properties
thermal resistance, case to heatsink
Hchstzulssige Sperrschichttemp.
T
vj max
Betriebstemperatur
maximum junction temperature
C
150
-
-
-40
-
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
125
C
C
T
stg
-40
-
125
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Mechanische Eigenschaften / mechanical properties
Nm
Anzugsdrehmoment, mech. Befestigung
mounting torque
Nm
8
-
10
1,7
T
vj op
terminal connection torque
M
operation temperature
storage temperature
Anzugsdrehmoment, elektr. Anschlsse
M
Lagertemperatur
Kriechstrecke
32
mm
mm
clearance
20
3 (8)
DB_FZ3600R12KE3_2.0.xls
2002-07-29
Technische Information / technical information
FZ3600R12KE3
IGBT-Module
IGBT-Modules
preliminary data
vorlufige Daten
output characteristic (typical)
T
vj
= 125C
output characteristic (typical)
V
GE
= 15V
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
Ausgangskennlinie (typisch)
I
C
= f(V
CE
)
0
1200
2400
3600
4800
6000
7200
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A
]
Tvj = 25C
Tvj = 125C
0
1200
2400
3600
4800
6000
7200
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A
]
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
4 (8)
DB_FZ3600R12KE3_2.0.xls
2002-07-29
Technische Information / technical information
FZ3600R12KE3
IGBT-Module
IGBT-Modules
preliminary data
vorlufige Daten
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward caracteristic of inverse diode (typical)
bertragungscharakteristik (typisch)
transfer characteristic (typical)
I
C
= f(V
GE
)
V
CE
= 20V
0
1200
2400
3600
4800
6000
7200
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A
]
Tvj=25C
Tvj=125C
0
1200
2400
3600
4800
6000
7200
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0
V
F
[V]
I
F
[A
]
Tvj = 25C
Tvj = 125C
5 (8)
DB_FZ3600R12KE3_2.0.xls
2002-07-29
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