FZ 1050 R 12 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200 V
Kollektor-Dauergleichstrom
DC-collector current
I
C
1050 A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
p
=1 ms
I
CRM
2100 A
Gesamt-Verlustleistung
total power dissipation
t
C
=25C, Transistor /transistor
P
tot
7 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GE
20 V
Dauergleichstrom
DC forward current
I
F
1050 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
I
FRM
2100 A
Isolations-Prfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
i
C
=1050A, v
GE
=15V, T
vj
=25C
v
CE sat
-
2,7
3,2 V
i
C
=1050A, v
GE
=15V, T
vj
=125C
-
3,3
3,9 V
Gate-Schwellenspannung
gate threshold voltage
i
C
=42mA, v
CE
=v
GE
, T
vj
=25C
v
GE(th)
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
f
O
=1MHz,T
vj
=25C,v
CE
=25V,v
GE
=0V C
ies
-
80
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1200V, v
GE
=0V, T
vj
=25C
i
CES
-
14
- mA
v
CE
=1200V, v
GE
=0V, T
vj
=125C
-
85
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, T
vj
=25C
i
GES
-
400 nA
Emitter-Gate Reststrom
gate leakage current
v
CE
=0V, v
EG
=20V, T
vj
=25C
i
EGS
-
400 nA
Einschaltzeit (ohmsche Last)
turn-on time (resistive load)
i
C
=1050A,v
CE
=600V,v
L
= 15V
t
on
R
G
=1,0
, T
vj
=25C
-
0,7
- s
R
G
=1,0
, T
vj
=125C
-
0,8
- s
Speicherzeit (induktive Last)
storage time (inductive load)
i
C
=1050A,v
CE
=600V,v
L
= 15V
t
s
R
G
=1,0
, T
vj
=25C
-
0,9
- s
R
G
=1,0
, T
vj
=125C
-
1
- s
Fallzeit (induktive Last)
fall time (inductive load)
i
C
=1050A,v
CE
=600V,v
L
= 15V
t
f
R
G
=1,0
, T
vj
=25C
-
0,1
- s
R
G
=1,0
, T
vj
=125C
-
0,15
- s
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
i
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH E
on
V
L
= 15 V, R
G
= 1,0
, T
vj
= 125C
-
150
- mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
i
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH E
off
V
L
= 15 V, R
G
= 1,0
, T
vj
= 125C
-
170
- mWs
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaspannung
forward voltage
i
F
=1050A, v
GE
=0V, T
vj
=25C
V
F
-
2,2
2,7 V
i
F
=1050A, v
GE
=0V, T
vj
=125C
-
2
2,5 V
Rckstromspitze
peak reverse recovery current
i
F
=1050A, -di
F
/dt=5,5kA/s
I
RM
v
RM
=600V, v
EG
=10V, T
vj
=25C
-
350
- A
v
RM
=600V, v
EG
=10V, T
vj
=125C
-
620
- A
Sperrverzgerungsladung
recovered charge
i
F
=1050A, -di
F
/dt=5,5kA/s
Q
r
v
RM
=600V, v
EG
=10V, T
vj
=25C
-
45
- As
v
RM
=600V, v
EG
=10V, T
vj
=125C
-
135
- As
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
R
thJC
0,018 C/W
Diode /diode, DC
0,036 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Module / per Module
R
thCK
typ. 0,008 C/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
T
vj max
150 C
Betriebstemperatur
operating temperature
T
c op
-40...+150 C
Lagertemperatur
storage temperature
T
stg
-40...+125 C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
Anzugsdrehmoment f. mech. Befestigung mounting torque
M1
3 Nm
Anzugsdrehmoment f. elektr. Anschlsse terminal connection torque
terminals M4
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca.1500 g
Bedingung fr den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 s
V
CC
= 750 V
v
L
= 15 V
v
CEM
= 900 V
R
GF
= R
GR
= 1,0
i
CMK1
9000 A
T
vj
= 125C
i
CMK2
7000 A
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
FZ 1050 R 12 KF4
FZ 1050 R 12 KF4 / 1
FZ 1050 R 12 KF4 / 2
FZ 1050 R 12 KF4 / 3
FZ 1050 R 12 KF4 / 4
1
2
3
4
5
i
C
[A]
i
C
[A]
v
CE
[V]
2500
2000
1500
1000
500
0
2500
2000
1500
1000
500
0
2500
2000
1500
1000
500
0
5
6
7
8
9
10
11
12
v
GE
[V]
10
-1
10
-2
10
-3
2
3
5
7
2
3
5
7
10
-3
10
-2
10
-1
10
0
10
1
2 3 4 6
2 3 4 6
2 3 4 6
2 3 4 6
Z
thJC
[
C/W
]
t [s]
0,5
1
1,5
2
2,5
3
i
F
[A]
v
F
[V]
Bild / Fig. 1
Kollektor-Emitter-Spannung im Sttigungsbereich (typisch) /
Collector-emitter-voltage in saturation region (typical)
V
GE
= 15 V
T
vj
= 25C
T
vj
= 125C
Bild / Fig. 2
bertragungscharakteristik (typisch) /
Transfer characteristic (typical)
V
CE
= 20 V
Bild / Fig. 3
Transienter Wrmewiderstand (DC) /
Transient thermal impedance (DC)
Bild / Fig. 4
Durchlakennlinien der Inversdiode (typisch)
Forward characteristics of the inverse diode (typical)
T
vj
= 25C
T
vj
= 125C
t
vj
=
Diode
IGBT
25C
125C
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