FS 300 R 16 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Bedingungen fr den Kurzschluschutz
Conditions for short-circuit protection
t
fg
=10s, v
LF
=v
LR
= 15V,
V
CC
=1000V
Unabhngig davon gilt bei abweich. Bedingungen / with regard to other conditions
R
GF
=R
GR
= 6,8
V
CEM
=1300V
vCEM = VCES -50 nH x Idic/dtI
t
vj
=125C
i
CMK1
3000A
i
CMK2
2300A
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the relevant technical notes.
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1600 V
Kollektor-Dauergleichstrom
DC-collector current
I
C
300 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
p
=1 ms
I
CRM
600 A
Gesamt-Verlustleistung
total power dissipation
t
C
=25C, Transistor /transistor
P
tot
2000 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GE
+/- 20 V
Dauergleichstrom
DC forward current
I
F
300 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
I
FRM
600 A
Isolations-Prfspannung
insulating test voltage
RMS, f=50 Hz, t= 1 min.
V
ISOL
3,4 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
i
C
=300A,v
GE
=15V, t
vj
=25C
v
CE sat
-
3,5
3,9 V
i
C
GE
=15V, t
vj
=125C
-
4,6
5,0 V
Gate-Schwellspannung
gate threshold voltage
i
C
=20mA, v
CE
=v
GE
, t
vj
=25C
v
GE(th)
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
f
O
=1MHz,t
vj
=25C,v
CE
=25V,v
GE
=0
C
ies
-
45
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1600V, v
GE
=0V, t
vj
=25C
i
CES
-
2
- mA
v
CE
=1600V, v
GE
=0V, t
vj
=125C
-
20
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, t
vj
=25C
i
GES
-
40
400 nA
Emitter-Gate Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, t
vj
=25C
i
GES
-
40
400 nA
Einschaltzeit (ohmsche Last)
turn-on time (resistive load)
i
C
CE
=900V,v
LF
=15V
t
on
v
LR
=15V,R
G
=6,8
, t
vj
=25C
-
0,8
- s
t
vj
=125C
-
1,0
- s
Speicherzeit (induktive Last)
storage time (inductive load)
i
C
=300A,v
CE
=900V,v
LF
=15V
t
s
v
LR
=15V,R
G
=6,8
, t
vj
=25C
-
1,1
- s
t
vj
=125C
-
1,3
- s
Fallzeit (induktive Last)
fall time (inductive load)
i
C
=300A,v
CE
=900V,v
LF
=15V
t
f
v
LR
=15V,R
G
=6,8
, t
vj
=25C
-
0,25
- s
t
vj
=125C
-
0,30
- s
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaspannung
forward voltage
i
F
=300A, v
GE
=0V, t
vj
=25C
V
F
-
2,4
2,8 V
i
F
=300A, v
GE
=0V, t
vj
=125C
-
2,2
- V
Rckstromspitze
peak reverse recovery current
i
F
=300A, -di
F
/dt=300A/s
I
RM
v
RM
=900V, v
EG
=10V, t
vj
=25C
-
25
- A
v
RM
=900V, v
EG
=10V, t
vj
=125C
-
50
- A
Sperrverzgerungsladung
recovered charge
i
F
=300A, -di
F
/dt=300A/s
Q
r
v
RM
=900V, v
EG
=10V, t
vj
=25C
-
8
- As
v
RM
=900V, v
EG
=10V, t
vj
=125C
-
30
- As
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case Transistor, DC, pro Modul/per module
R
thJC
0,011 C/W
Diode, DC, pro Modul/per module
0,064 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink pro Module / per Module
R
thCK
Hchstzul. Sperrschichttemperatur
max. junction temperature
pro Module / per Module
t
vj max
150 C
Betriebstemperatur
operating temperature
Transistor / transistor
t
c op
-40...+150 C
Diode / diode
t
c op
-40...+125 C
Lagertemperatur
storage temperature
t
stg
-40...+125 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Seite 1
Innere Isolation
internal insulation
Al
2
O
3
Anzugsdrehmoment f. mech. Befestigung mounting torque
M1
3 Nm
Anzugsdrehmoment f. elektr. Anschlsse terminal connection torque
terminals M6
M2
5...6 Nm
Gewicht
weight
G
ca.2300 g
eupec GmbH + Co KG, Max-Planck-Str. 5, D59581 Warstein, Telefon +49 (0)2902/ 764-0, Telefax /764-256
=300A,v
=300A,v
0,027 C/W
0,160 C/W
0,048 C/W
0,008 C/W
Transistor, DC, pro Zweig/per arm
Diode, DC, pro Zweig/per arm
pro Zweig / per arm
typ.
typ.
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