FMM5117X
20-32GHz Downconverter MMIC
Edition 1.3
May 2003
FEATURES
Integrated Monolithic Downconverter
High Linearity
Single Supply Voltage Operation
High Reliability
DESCRIPTION
The FMM5117X is a double, single balanced diode mixer
downconverter designed for applications in the 20 to 32GHz
frequency range. The device consists of a low noise mixer,
LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios,
local multi-point distribution systems (LMDS) and satellite communications, as it offers a
high dynamic range over a large bandwidth.
Parameter
DC Supply Voltage
Input Power
Storage Temperature
Symbol
V
DD1,2
8
10
-65 to +175
V
dBm
C
T
stg
P
inLO
Input Power
20
dBm
P
inRF
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
C)
Item
Symbol
Conditions
Unit
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Limits
Typ.
Max.
Min.
Conversion Gain Flatness
(fixed f
LO
, swept f
IF
) (f
LO
=13.5GHz)
G
dB
-
-
2
RL
RF
, RL
LO
Return Loss (RF/LO)
dB
-
12
-
Input P1dB at RF Port
P1dB
RFIN
dBm
-
15
-
3rd Order Input Intercept Point
IIP3
dBm
-
23
-
DC Current Consumption
I
DC
mA
150
100
-
RF Current Consumption
I
RF
mA
200
140
-
LO Frequency Range
GHz
f
LO
9.5
-
16.5
RF Frequency Range
f
RF
GHz
20
-
32
IF Frequency Range (Note 2)
GHz
f
IF
0.1
-
3
Conversion Gain
dB
G
-18
-10
-
Conversion Gain Flatness
(fixed f
IF
, swept f
LO
) (f
IF
=1.0GHz)
-
5
-
dB
G
Return Loss (IF)
RL
IF
dB
-
4
-
V
DD1,2
=5V,
V
GG
=0V,
P
LO
=3dBm,
P
RF
=0dBm
Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1)
Note 2: The IF frequency range is dependent on the selected LO and RF frequency.
Item
Symbol
Unit
RECOMMENDED OPERATING CONDITIONS
Recommend
Typ.
Max.
Min.
Operating Backside Temperature
C
Tbs
-45
25
110
Input LO Power Level
P
inLO
dBm
0.0
3.0
5.0
DC Supply Voltage
V
V
DD1,2
5.0
Note 1: This product should be hermetically packaged.
FMM5117X
20-32GHz Downconverter MMIC
f
LO
=13GHz
IF RETURN LOSS vs. FREQUENCY
2.5
3
3.5
1
0.5
2
1.5
4
-8
-6
-4
-2
IF Frequency (GHz)
IF Return Loss (dB)
V
DD1,2
=5V,
P
LO
=
3dBm,
P
RF
=0dBm
CONVERSION GAIN (LSB) vs. FREQUENCY
26
28
30
34
20
18
24
22
32
36
-18
-16
-14
-12
-10
-8
-6
-4
-2
2 x LO Frequency (GHz)
Conversion Gain (LSB) (dB)
-20
f
IF
=1GHz
f
IF
=2GHz
f
IF
=3GHz
V
DD1,2
=5V,
P
LO
=
3dBm,
P
RF
=0dBm
f
IF
=1GHz
f
IF
=2GHz
f
IF
=3GHz
26
28
30
34
20
18
24
22
32
36
Conversion Gain (USB) (dB)
CONVERSION GAIN (USB) vs. FREQUENCY
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
2 x LO Frequency (GHz)
IM3 vs. FREQUENCY
13
11
9
15
-40
-50
-60
-30
-20
-10
0
10
20
30
LO Frequency (GHz)
IM3 Suppression (dBc) / IIP3 (dBm)
IIP3
V
DD1,2
=5V,
f
IF
=1GHz
f=10MHz
PL
O
=3dBm,
P
RF
=0dBm,
IM3
RF Return Loss; f
IF
=1GHz
RF RETURN LOSS vs. FREQUENCY
28
30
32
22
20
26
24
-25
-20
-15
-10
-5
RF Frequency (GHz)
RF Return Loss (dB)
2xLO OUTPUT POWER vs. FREQUENCY
11
12
13
10
9
14
15
16
17
-40
-35
-30
-25
-20
-15
-10
-5
0
LO Frequency (GHz)
2x LO Output Power (dBm)@RF Port
V
DD1,2
=5V
P
LO
=3dBm,
P
RF
=0dBm,
f
IF
=1GHz,
FMM5117X
20-32GHz Downconverter MMIC
CHIP OUTLINE
0
190
460
1690
1775
2045
2260
0190
1195
2135 2300
2865 3085
LO
RF
V
GG
V
DD1
V
DD2
IF
Chip Size: 3.085mm x 2.26mm
Chip Thickness: 110
m (Typ.)
Pad Dimensions: 1. RF: 80 x 160
m
2.
V
DD1
: 80 x 80
m
3.
V
DD2
: 100 x 100
m
4. LO: 80 x 160
m
5.
V
GG
: 100 x 100m
6. IF: 80 x 120
m
Unit:
m
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder,
or liquid through burning, crushing, or chemical processing
as these by-products are dangerous to the human body
if inhaled, ingested, or swallowed.
Observe government laws and company regulations
when discarding this product. This product must be
discarded in accordance with methods specified
by applicable hazardous waste procedures.
CAUTION
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
For further information please contact:
F
UJITSU COMPOUND SEMICONDUCTOR, INC.
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San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
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Norreys Drive
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United Kingdom
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FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
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Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0502M200
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