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Электронный компонент: FLM7785-45F

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C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
add=32.5%(Typ.)
Broad Band: 7.7~8.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
O
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
O
C)
CASE STYLE: IK
1
FLM7785-45F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
115
-65 to +175
V
V
W
O
C
Channel Temperature
T
ch
175
O
C
Power Gain at 1dB G.C.P.
Limit
Item
Symbol
Test Conditions
Unit
Drain Current
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
P
1dB
G
A
V
dB
dBm
Min.
Typ.
Max.
Drain Current
I
dsr
S
V
A
-
16 -
-0.5 -1.5 -3.0
-5.0 -
-
46.0 46.5 -
6.0 7.0 -
-
11
13
V
DS
=10V
f=7.7 - 8.5 GHz
I
DS
(DC)=8.0A(typ.)
Zs=Z
L
=50
Power-added Efficiency
add
%
-
32.5 -
-
-
1.6
-
24 -
V
DS
=5V, V
GS
=0V
Transconductance
g
m
V
DS
=5V, I
DS
=8.0A
Pinch-off Voltage
V
p
V
DS
=5V, I
DS
=960mA
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-960uA
G
1dB
dB
Thermal Resistance
R
th
Channel to Case
-
1.1 1.3
O
C/W
Channel Temperature Rise
T
ch
10V x Ids(DC) x Rth
-
-
100
O
C
DESCRIPTION
The FLM7785-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25
O
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
10
52
V
mA
Limit
R
G
=10
Reverse Gate Current
I
GR
R
G
=10
-23.2
mA
G.C.P.:Gain Compression Point
ESD
Class III
2000V~
Edition 1.3
September 2004
FLM7785-45F
C-Band Internally Matched FET
2
Power Derating Curve
0
20
40
60
80
100
120
140
0
50
100
150
200
Case Temperature (
O
C)
Tota
l
Po
w
e
r D
i
s
s
i
pa
tion (
W
)
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
26
28
30
32
34
36
38
40
Output Power (dBm)
S.C.L : Single Carrier Level
IM
D
(
d
B
c
)
IMD vs Output Power
VDS=10V, IDS(DC)=8.0A
f
1
=8.50GHz,
f
2
=8.51GHz
IM3
IM5
Output Power vs. Frequency
VDS=10V,IDS(DC)=8A
36
38
40
42
44
46
48
7.5
7.7
7.9
8.1
8.3
8.5
8.7
Frequency (GHz)
O
u
t
put
P
o
w
e
r
(
d
B
m
)
Pin=30dBm
Pin=34dBm
Pin=38dBm
Pin=40dBm
P1dB
Output Power & P.A.E vs. Input Power
36
38
40
42
44
46
48
50
28
30
32
34
36
38
40
42
Input Power (dBm)
Ou
t
p
u
t
P
o
w
e
r

(
d
B
m
)
0
20
40
60
80
100
120
140
VDS=10V, IDS(DC)=8.0A, f=8.1GHz
Power Added Efficiency (%)
Pout
P.A.E
C-Band Internally Matched FET
FLM7785-45F
VDS=10V, IDS(DC)=8.0A
Freq
[GHz]
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7.5
0.59
-92.42
2.42
37.25
0.05
87.74
0.55
-83.48
7.6
0.54
-115.60
2.50
18.21
0.05
55.84
0.50
-102.39
7.7
0.49
-132.70
2.53
3.25
0.06
31.40
0.47
-118.61
7.8
0.44
-150.94
2.55
-12.24
0.06
6.43
0.44
-136.88
7.9
0.36
-175.21
2.58
-34.31
0.07
-27.13
0.42
-161.09
8.0
0.31
166.47
2.59
-51.85
0.07
-52.27
0.42
-178.81
8.1
0.26
145.07
2.57
-73.91
0.08
-80.04
0.41
161.62
8.2
0.21
122.80
2.56
-99.42
0.08
-110.35
0.41
143.05
8.3
0.19
104.80
2.55
-121.60
0.08
-134.88
0.41
129.89
8.4
0.18
87.15
2.55
-143.52
0.08
-159.01
0.40
118.61
8.5
0.17
66.26
2.54
-168.78
0.09
171.71
0.39
106.72
8.6
0.16
47.84
2.55
169.26
0.09
145.16
0.38
96.08
8.7
0.15
30.74
2.55
149.06
0.09
121.06
0.36
87.58
8.8
0.12
8.33
2.53
119.25
0.09
88.15
0.32
77.86
S11
S21
S12
S22
S 11
S 22
25
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
10
7 .7 G H z
7 .7 G H z
8 .1 G H z
8 .1 G H z
8 .5 G H z
8 .5 G H z
S-PARAMETER
3
6
S 12
S 21
0.3
6
180
0
-90
+90
Scale for |S
21
|
7.7GHz
2
7.7GHz
8.1GHz
8.1GHz
8.5GHz
8.5GHz
Scale for |S12|
5
FLM7785-45F
C-Band Internally Matched FET
Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
C-Band Internally Matched FET
FLM7785-45F
5
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.