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Электронный компонент: FLM1011-15F

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X,Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.0dB(Typ.)
High PAE:
add=31%(Typ.)
Broad Band: 10.7~11.7GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.2
September 2004
1
FLM1011-15F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ESD
Class III
2000V~
CASE STYLE: IB
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
C)
Power Gain at 1dB G.C.P.
Limit
Item
Symbol
Test Conditions
Unit
Drain Current
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
P
1dB
G
A
V
dB
dBm
Min.
Typ.
Max.
Drain Current
I
dsr
mS
V
A
-
4500 -
-0.5 -1.5 -3.0
-5.0 -
-
41.0 42.0 -
6.0 7.0 -
-
4.0 5.0
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.5Idss (typ)
Zs=Z
L
=50
Power-added Efficiency
add
%
-
31 -
-
-
1.2
-
7.2 10.8
V
DS
=5V, V
GS
=0V
Transconductance
g
m
V
DS
=5V, I
DS
=4.55A
Pinch-off Voltage
V
p
V
DS
=5V, I
DS
=300mA
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-300uA
G
1dB
dB
Thermal Resistance
R
th
Channel to Case
-
2.3 2.6
o
C/W
Channel Temperature Rise
T
ch
10V x Idsr x Rth
-
-
100
o
C
3rd Order Intermodulation
Distortion
IM
3
-42 -45 -
dBc
f=11.7GHz,
f=10MHz, 2-Tone Test
Pout=30.0dBm S.C.L.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
57.7
-65 to +175
V
V
W
Channel Temperature
T
ch
175
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
C)
Item
Symbol
Condition
Unit
DC Input Voltage
V
DS
10
16.7
V
mA
Limit
R
G
=50
R
G
=50
-3.62
mA
Forward Gate Current
I
GF
Reverse Gate Current
I
GR
Vds=10V, Ids=0.5Idss
32
34
36
38
40
42
44
10.5
10.7
10.9
11.1
11.3
11.5
11.7
11.9
Frequency [GHz]
Out
p
ut
P
o
w
e
r

[
d
B
m
]
FLM1011-15F
X,Ku-Band Internally Matched FET
2
Pin=26dBm
Pin=30dBm
Pin=34dBm
Pin=36dBm
P1dB
OUTPUT POWER v.s. FREQUENCY
IMD v.s. OUTPUT POWER (S.C.L.)
0
10
20
30
40
50
60
0
50
100
150
200
Case Temperature [ C]
Tota
l
Po
w
e
r D
i
s
s
i
pa
tion [
W
]
POWER DERATING CURVE
o
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
Vds=10V, Ids=0.5Idss Freq=11.2GHz
Input Power [dBm]
Po
w
e
r
Add
e
d Effi
ci
en
cy
[
%
]
Output Po
w
e
r [dBm]
22
38
30
32
34
36
38
40
42
44
22
24
26
28
30
32
34
36
38
0
10
20
30
40
50
60
70
Pout
PAE
-64
-60
-56
-52
-48
-44
-40
25
26
27
28
29
30
31
32
33
34
Output Power (S.C.L.) [dBm]
Inte
rmodul
ation
D
i
s
tortio
n [dBc]
IM3
IM5
Vds=10V, Ids=3.6A
f1=11.70GHz, f2=11.71GHz, 2-tone test
FLM1011-15F
X,Ku-Band Internally Matched FET
3
S-PARAMETERS
VDS=10V , IDS=0.5Idss
S 11
S 22
10.7
25
11.1
10.9
11.3
10
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
50
11.7
11.5
11.9
11.7
11.5
10.7
11.1
10.9
11.3
10.5
10.5
11.9
S 21
S 12
0.6
6
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
11.7
11.5
11.9
10.7
11.1
10.9
11.3
10.5
11.7
11.5
11.9
10.7
11.1
10.9
11.3
10.5
Freq.
(G H z)
M A G
A N G
M A G
A N G
M A G
A N G
M A G
A N G
10.5
0.580
62.4
2.199
163.7
0.061
143.2
0.438
-10.3
10.6
0.543
51.5
2.241
152.6
0.067
131.7
0.439
-21.9
10.7
0.505
39.9
2.289
142.1
0.072
121.5
0.442
-33.2
10.8
0.465
26.8
2.328
131.0
0.078
109.7
0.446
-44.2
10.9
0.428
11.9
2.380
119.8
0.084
98.9
0.440
-54.3
11.0
0.389
-5.2
2.419
108.3
0.089
87.5
0.426
-64.2
11.1
0.359
-23.9
2.453
96.2
0.092
75.7
0.406
-73.5
11.2
0.334
-45.5
2.476
84.4
0.095
64.1
0.378
-81.8
11.3
0.325
-67.6
2.472
72.1
0.097
51.7
0.342
-88.4
11.4
0.325
-90.9
2.466
59.6
0.099
40.7
0.298
-93.3
11.5
0.338
-113.1
2.446
47.2
0.100
28.0
0.250
-95.3
11.6
0.359
-134.2
2.403
34.3
0.100
16.9
0.201
-95.0
11.7
0.383
-154.1
2.367
21.8
0.099
6.5
0.158
-88.3
11.8
0.415
-172.6
2.312
9.1
0.096
-4.4
0.128
-74.1
11.9
0.445
169.3
2.243
-4.3
0.095
-15.8
0.121
-52.5
S 11
S 21
S 12
S 22
X,Ku-Band Internally Matched FET
4
FLM1011-15F
Package Out Line
Unit : mm
PIN ASSIGNMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Case Style : IB
FLM1011-15F
X,Ku-Band Internally Matched FET
5
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.