1
Edition 1.7
December 1999
FLL600IQ-3
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in WLL and MMDS base station amplifiers as it offers high
gain, long term reliability and ease of use.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Push-Pull Configuration
High Power Output: 60W
High PAE: 43%.
Broad Frequency Range: 2000 to 2700 MHz.
Suitable for class AB operation.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
Symbol
I
DSS
V
GSO
-
12
-
-
24
32
-1.0
-2.0
-3.5
-5
-
-
47.0
48.0
-
9.0
10.0
-
-
43
-
-
0.8
1.2
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Channel to Case
V
DS
= 12V
f=2.7 GHz
I
DS
= 4.0A
A
S
V
dB
dBm
V
C/W
%
gm
V
p
P
1dB
G
1dB
add
Drain Current
-
11.0
15.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
G.C.P.: Gain Compression Point
CASE STYLE: IQ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
Tc = 25C
V
V
W
C
C
V
GS
P
T
T
stg
T
ch
Condition
125
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with
gate resistance of 25.
3. The operating channel temperature (Tch) should not exceed 145C.
2
FLL600IQ-3
L-Band Medium & High Power GaAs FET
VDS = 12.0V
IDS = 4.0A
f = 2.7GHz
OUTPUT POWER & add vs. INPUT POWER
20
22
24
26
28
30
32
34
36
38
40
29
31
33
35
37
39
41
43
45
47
49
50
10
0
20
30
40
50
60
Output Power (dBm)
35
37
39
41
43
45
47
49
51
Output Power (dBm)
add
(%)
Pout
add
VDS = 12.0V
IDS = 4.0A
f = 2.7GHz
OUTPUT POWER vs. FREQUENCY
2.4
2.5
2.6
2.7
2.8
25dBm
30dBm
35dBm
38dBm
Pin=40dBm
Frequency (GHz)
Input Power (dBm)
POWER DERATING CURVE
40
80
100
120
140
60
20
0
50
100
150
200
Case Temperature (C)
Total Power Dissipation (W)
3
FLL600IQ-3
L-Band Medium & High Power GaAs FET
S-PARAMETERS
VDS = 12V, IDS = 2000mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
.978
178.4
.905
76.5
.005
47.5
.807
176.5
600
.974
176.4
.793
73.0
.005
51.3
.895
175.3
700
.972
175.0
.729
69.5
.006
61.1
.896
174.9
800
.962
173.6
.684
66.2
.006
58.1
.886
174.1
900
.961
172.5
.690
62.2
.008
51.9
.873
173.1
1000
.952
170.7
.688
57.1
.009
51.7
.866
172.4
1100
.944
168.6
.718
51.1
.011
56.7
.858
171.7
1200
.933
167.0
.740
44.6
.013
50.1
.844
171.3
1300
.924
165.2
.784
37.5
.014
46.6
.832
171.1
1400
.901
162.7
.836
29.6
.016
42.9
.823
171.0
1500
.881
160.4
.898
20.8
.018
36.2
.814
171.2
1600
.853
157.8
.959
11.6
.020
28.6
.815
171.7
1700
.816
155.2
1.043
1.3
.023
23.3
.818
172.6
1800
.778
152.9
1.116
-10.0
.024
16.5
.828
172.9
1900
.736
151.0
1.231
-20.8
.026
7.8
.843
173.3
2000
.704
148.6
1.386
-32.8
.029
-9.8
.864
172.4
2100
.636
146.2
1.566
-47.5
.026
-22.1
.871
171.2
2200
.579
145.5
1.730
-61.5
.025
-30.4
.887
169.9
2300
.508
145.9
1.998
-78.1
.025
-45.0
.876
167.5
2400
.439
152.3
2.278
-97.6
.023
-65.2
.843
164.8
2500
.439
166.3
2.605
-116.1
.020
-94.7
.782
163.6
2600
.562
172.4
2.774
-144.5
.013
-141.0
.697
166.2
2700
.700
162.6
2.675
-173.0
.013
137.0
.661
173.7
2800
.755
146.1
2.312
160.3
.016
85.1
.692
-179.9
2900
.723
126.8
1.967
137.9
.021
51.3
.748
-177.1
3000
.648
107.1
1.649
119.3
.026
37.5
.805
-176.7
3100
.579
74.7
1.536
101.2
.034
23.2
.841
-177.3
3200
.477
26.1
1.338
78.5
.040
2.4
.875
-178.6
3300
.318
-33.9
.963
58.0
.038
-21.5
.909
179.2
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
-60
-56
-52
-48
-44
-40
-36
-32
-28
30
28
26
32
34
36
38
40
42
44
Total Output Power (dBm)
VDS = 12V
IDS = 4.0A
f = 2.7GHz
f = 5.0MHz
2-tone test
IMD (dBc)
OUTPUT POWER vs. IMD
IM5
IM3
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLL600IQ-3
L-Band Medium & High Power GaAs FET
Case Style "IQ"
Unit: mm (inches)
8.0
(0.315)
1.9
(0.075)
2.5 MIN.
2.5 MIN.
17.4
(0.685)
4-R1.3
(0.051)
16.4
(0.646)
0.2
0.15
6.0
(0.236)
0.2
20.4
(0.803)
0.2
24.0
(0.945)
0.2
0.2
0.2
2.0
(0.079)
1
2
5
4
3
1, 2: Gate
3: Source
4, 5: Drain
0.13
2.4
(0.094)
4.4 Max.
0.1
(0.004)
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