N11/1
PNP RF Amplifier Transistor
Surface Mount
CASE 318D03, STYLE1
S C 5 9
ECX
MAXIMUM RATINGS
(T
A
= 25 C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30
Vdc
Collector-Emitter Voltage
V
CEO
20
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current - Continuous
I
C
30
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
-55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C)
Characteristic
Symbo
lMin
Max
Unit
Collector Cutoff Current
I
CBO
--
0.1
Adc
(V
CB
= 10 Vdc, I
E
= 0)
Collector-Emitter Breakdown Voltage
I
CEO
--
100
Adc
(V
CE
= 20 Vdc, I
B
= 0)
Emitter-Base Breakdown Voltage
I
EBO
--
10
Adc
(V
EB
= 5.0 Vdc, I
C
= 0)
DC Current Gain (1)
h
FE
110
220
--
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
Current-Gain - Bandwidth Product
f
T
150
--
MHz
(V
CB
= 10 Vdc, I
E
= 1.0 mAdc)
1. Pulse Test: Pulse Width < 300
s, D.C. < 2%.
COLLECTOR
3
2 1
BASE EMITTER
MSA1022CT1
DEVICE MARKING
Marking Symbol
The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
1
3
2
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