R.-.061300
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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TCS800
800 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 MHz, with the pulse
width and duty required for TCAS applications. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
C
1
1944 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65 V
Emitter to Base Voltage (BV
ebo
)
3.5 V
Collector Current (I
c
)
50 A
Maximum Temperatures
Storage Temperature
-65 to +200
C
Operating Junction Temperature
+230
C
ELECTRICAL CHARACTERISTICS @ 25
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
Power Out
F = 1030 MHz
800
W
P
in
Power Input
120
W
P
g
Power Gain
8.0
9.0
dB
c
Collector Efficiency
45
%
R
L
Input Return Loss
V
CC
= 50 Volts
PW = 32
sec
DF = 1%
-12
dB
Pd
Pulse Droop
0.5
dB
VSWR
Load Mismatch Tolerance
F = 1030 MHz
4:1
FUNCTIONAL CHARACTERISTICS @ 25
C
BV
ebo
*
Emitter to Base Breakdown
Ie = 70 mA
3.5
V
BV
ces
Collector to Emitter Breakdown
Ic = 100 mA
65
V
h
FE
*
DC Current Gain
Vce = 5V, Ic = 5A
20
jc
1
Thermal Resistance
0.09
C/W
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns
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