TC2696
REV.2_04/12/2004
TRANSCOM, INC., 90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
2 W Typical Output Power at 2.45 GHz
14 dB Typical Linear Power Gain at 2.45 GHz
High Linearity:
IP3 = 43 dBm Typical at 2.45 GHz
High Power Added Efficiency:
Nominal PAE of 43 % at 2.45 GHz
Suitable for High Reliability Application
Breakdown Voltage:
BV
DGO
18 V
Lg = 0.6
m, Wg = 5 mm
100 % DC Tested
Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are
100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
power amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
ELECTRICAL SPECIFICATIONS (T
A
=25
C)
Symbol CONDITIONS
MIN TYP MAX
UNIT
P
1dB
Output Power at 1dB Gain Compression Point , f = 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA
32.5
33
dBm
G
L
Linear Power Gain, f = 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA
12
14
dB
IP3
Intercept Point of the 3
rd
-order Intermodulation, f = 2.45GHz
V
DS
= 8 V, I
DS
= 600 mA, *P
SCL
= 20 dBm
43
dBm
PAE
Power Added Efficiency at 1dB Compression Power, f = 2.45GHz
43
%
I
DSS
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
1.2
A
g
m
Transconductance at V
DS
= 2 V, V
GS
= 0 V
850
mS
V
P
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
-1.7**
Volts
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=2.5 mA
15 18
Volts
R
th
Thermal
Resistance
7
C/W
Note: * P
SCL
: Output Power of Single Carrier Level.
PHOTO ENLARGEMENT
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TC2696
REV.2_04/12/2004
TRANSCOM, INC., 90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/2
ABSOLUTE MAXIMUM RATINGS (T
A
=25
C)
Symbol Parameter
Rating
V
DS
Drain-Source
Voltage
12
V
V
GS
Gate-Source Voltage
-5 V
I
DS
Drain
Current
I
DSS
P
in
RF Input Power, CW
26 dBm
P
T
Continuous Dissipation
7.7 W
T
CH
Channel Temperature
175
C
T
STG
Storage Temperature
- 65
C
to +175
C
RECOMMANDED OPERATING CONDITION
Symbol Parameter
Rating
V
DS
Drain to Source Voltage
8 V
I
D
Drain Current
600 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
TYPICAL SCATTERING PARAMETERS (T
A
=25
C)
V
DS
= 8 V, I
DS
= 600 mA
FREQUENCY
S11
S21
S12
S22
(GHz)
MAG ANG MAG ANG MAG ANG MAG ANG
2
0.9232 175.28 1.8019
58.43 0.0288 -14.46 0.6268 174.83
3
0.9179 161.34 1.2279
38.12 0.0303 -26.85 0.6531 167.56
4
0.9098 148.40 0.9600
19.07 0.0327 -38.61 0.6737 158.81
5
0.8978 134.59 0.8236
0.11 0.0364 -50.96 0.6847 148.28
6 0.8806
118.62
0.7599
-19.79
0.0420
-64.88
0.6839
135.52
7 0.8574
99.05
0.7426
-41.79
0.0496
-81.49
0.6699
119.60
8
0.8295 74.18 0.7529 -67.22 0.0595 -102.04 0.6430 98.92
9
0.8045 42.52 0.7648 -97.22 0.0701 -127.59 0.6085 71.06
OUTLINE DIMENSIONS
(in mm)
Source
Source
Drain
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