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Электронный компонент: HCP12C60

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Silicon Controlled
Rectifier
HCP12C60
BT151-600
,
T
j
=25
T
stg
----
......................................................... -40~150
T
j
----
..................................................................-40~125
V
DRM
----
................................................600V
I
T
RMS
----
RMS .................................... 12A
I
T(AV)
----T
C
=109........................ 7.6A
I
TSM
----
(1/2 ,60H
Z,
,) ............... 132A
V
RGM
-- ......................................................5V
I
FGM
----
................................................2.0A
P
GM
----............................................................
5.0W
T
c
=25
I
DRM
10
200
uA
uA
V
AK
=V
DRM
T
c
=25
T
c
=125
V
TM
(1)
1.6
V
I
TM
=24Atp=380us
I
GT
(2)
15
mA
V
AK
=6VDC, R
L
=10 ohm
T
c
=25
V
GT
(2)
1.5
V
V
AK
=6VDC, R
L
=10 ohm
T
c
=25
V
GD
(1) 0.2
V
V
AK
=12V, R
L
=100 ohm
T
c
=125
I
H
20
mA
I
T
=100mA,
T
c
=25
(dv/dt)c
200
V/us
V
D
=V
DRM
67%,
,T
j
=125
Rth(j-c)
1.3
/W
Rth(j-a)
60
/W
Silicon Controlled
Rectifier
HCP12C60
BT151-600
(
c
)










(V)
(mA) (A)
c/W
A
V sec
---- ----
Silicon Controlled
Rectifier
HCP12C60
BT151-600
W
(A)
1 1.0ms, 1%
2 R
GK