SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
1BZ
FMMT2222A 1P
FMMT2222R 2P
FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222
FMMT2907
FMMT2222A
FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT2222
FMMT2222A
UNIT
Collector-Base Voltage
V
CBO
60
75
V
Collector-Emitter Voltage
V
CEO
30
40
V
Emitter-Base Voltage
V
EBO
5
6
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222
FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
75
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
40
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
6
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
10
10
10
10
nA
A
nA
A
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150C
V
CB
=60V, I
E
=0, T
amb
=150C
Emitter Cut-Off
Current
I
EBO
10
10
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
10
10
nA
V
CE
=60V, V
EB(off)
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
1.0
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.6
2.0
2.6
0.6
1.2
2.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Static Forward
Current Transfer
Ratio
h
FE
35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222
FMMT2222A
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Transition
Frequency
f
T
250
300
MHz
I
C
=20mA, V
CE
=20V
f=100MHz
Output Capacitance
C
obo
8
8
pF
V
CB
=10V, I
E
=0,
f=140KHz
Input Capacitance
C
ibo
30
25
pF
V
EB
=0.5V, I
C
=0
f=140KHz
Delay Time
t
d
10
10
ns
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
Rise Time
t
r
25
25
ns
Storage Time
t
s
225
225
ns
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test
Circuit)
Fall Time
t
f
60
60
ns
FMMT2222
FMMT2222A
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
+30V
200
619
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1K
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500
s
=100
s
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
C
B
E
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
1BZ
FMMT2222A 1P
FMMT2222R 2P
FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222
FMMT2907
FMMT2222A
FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT2222
FMMT2222A
UNIT
Collector-Base Voltage
V
CBO
60
75
V
Collector-Emitter Voltage
V
CEO
30
40
V
Emitter-Base Voltage
V
EBO
5
6
V
Continuous Collector Current
I
C
600
mA
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222
FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
60
75
V
I
C
=10
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
40
V
I
C
=10mA, I
B
=0
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
6
V
I
E
=10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
10
10
10
10
nA
A
nA
A
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150C
V
CB
=60V, I
E
=0, T
amb
=150C
Emitter Cut-Off
Current
I
EBO
10
10
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
10
10
nA
V
CE
=60V, V
EB(off)
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
1.0
0.3
1.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.6
2.0
2.6
0.6
1.2
2.0
V
V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
Static Forward
Current Transfer
Ratio
h
FE
35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL FMMT2222
FMMT2222A
UNIT CONDITIONS.
MIN.
MAX. MIN.
MAX.
Transition
Frequency
f
T
250
300
MHz
I
C
=20mA, V
CE
=20V
f=100MHz
Output Capacitance
C
obo
8
8
pF
V
CB
=10V, I
E
=0,
f=140KHz
Input Capacitance
C
ibo
30
25
pF
V
EB
=0.5V, I
C
=0
f=140KHz
Delay Time
t
d
10
10
ns
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
Rise Time
t
r
25
25
ns
Storage Time
t
s
225
225
ns
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test
Circuit)
Fall Time
t
f
60
60
ns
FMMT2222
FMMT2222A
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
+30V
200
619
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1K
Scope:
R
in
> 100 k
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500
s
=100
s
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
C
B
E
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