TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ902D
BUZ903D
V
DSX
Drain Source Voltage
V
GSS
Gate Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation
@ T
case
= 25C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
JC
Thermal Resistance Junction Case
14V
16A
16A
250W
55 to 150C
150C
0.5C/W
MECHANICAL DATA
Dimensions in mm
39
.
0
1.
1
3
0
.
2
0.
15
16.
9 0.
1
5
R 4.0 0.1
R 4.4 0.2
1
.
0
2
0
M
a
x
.
1.50
Typ.
11.60
0.3
8.7 Max.
10.90 0.1
+0.1
-0.15
25.0
1
2
NCHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY PCHANNEL
BUZ907D & BUZ908D
Pin 1 Gate
TO3
Pin 2 Drain
Case Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ902D
220V
BUZ903D
250V
V
V
V
V
V
mA
mA
S
220
250
14
0.10
1.5
12
0.75
10
10
1.4
4
BV
DSX
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
V
GS(OFF)
Gate Source CutOff Voltage
V
DS(SAT)
*
Drain Source Saturation Voltage
R
DS(on)
*
Static Source Resistance
I
DSX
Drain Source CutOff Current
yfs*
Forward Transfer Admittance
V
GS
= -10V
BUZ902D
I
D
= 10mA
BUZ903D
V
DS
= 0
I
G
= 100
A
V
DS
= 10V
I
D
= 100mA
V
GD
= 0
I
D
= 16A
V
GS
= 10
I
D
= 16A
V
DS
= 220V
BUZ902D
V
GS
= -10V
V
DS
= 250V
BUZ903D
V
DS
= 10V
I
D
= 3A
TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ902D
BUZ903D
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: Pulse Width = 300
s , Duty Cycle
2%.
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turnon Time
t
off
Turn-off Time
TBA
TBA
TBA
TBA
TBA
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
D
G
S
DYNAMIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
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