TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900
BUZ901
V
DSX
Drain Source Voltage
V
GSS
Gate Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation
@ T
case
= 25C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
JC
Thermal Resistance Junction Case
14V
8A
8A
125W
55 to 150C
150C
1C/W
MECHANICAL DATA
Dimensions in mm
39
.
0
1.
1
3
0
.
2
0.
15
16.
9 0.
1
5
R 4.0 0.1
R 4.4 0.2
1
.
0
2
0
M
a
x
.
1.50
Typ.
11.60
0.3
8.7 Max.
10.90 0.1
+0.1
-0.15
25.0
1
2
NCHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
NCHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
PCHANNEL ALSO AVAILABLE AS
BUZ905 & BUZ906
Pin 1 Gate
TO3
Pin 2 Drain
Case Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900
160V
BUZ901
200V
TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900
BUZ901
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSX
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
V
GS(OFF)
Gate Source CutOff Voltage
V
DS(SAT)
*
Drain Source Saturation Voltage
I
DSX
Drain Source CutOff Current
yfs*
Forward Transfer Admittance
160
200
14
0.15
1.5
12
10
10
0.7
2
* Pulse Test: Pulse Width = 300
s , Duty Cycle
2%.
V
GS
= 10V
BUZ900
I
D
= 10mA
BUZ901
V
DS
= 0
I
G
= 100
A
V
DS
= 10V
I
D
= 100mA
V
GD
= 0
I
D
= 8A
V
DS
= 160V
BUZ900
V
GS
= 10V
V
DS
= 200V
BUZ901
V
DS
= 10V
I
D
= 3A
V
V
V
V
mA
S
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turnon Time
t
off
Turn-off Time
500
300
10
100
50
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 5A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T -- CASE TEMPERATURE (C)
C
C
H
A
N
N
E
L
D
I
S
S
I
P
A
T
I
O
N
(
W
)
Derating Chart
TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900
BUZ901
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
9
P
= 1
25
W
C
H
I
--
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V -- DRAIN SOURCE VOLTAGE (V)
DS
T = 25C
C
6V
5V
4V
3V
2V
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
9
P
= 1
25
W
C
H
I
--
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V -- DRAIN SOURCE VOLTAGE (V)
DS
C
T = 75C
6V
5V
4V
3V
2V
0
2
4
6
8
10
12
14
0
2
4
6
8
10
V -- GATE SOURCE VOLTAGE (V)
GS
V
--
D
R
A
I
N
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
D
S
T = 25C
C
I = 6A
D
I = 3A
D
I = 1A
D
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
I
--
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V -- GATE SOURCE VOLTAGE (V)
GS
V = 10V
DS
T = 100C
C
T = 25C
C
T = 75C
C
1
10
100
1000
0.01
0.1
1
10
I
--
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V -- DRAIN SOURCE VOLTAGE (V)
DS
1
6
0
V
2
0
0
V
DC
O
PE
R
AT
IO
N
T = 25C
C
BUZ900
BUZ901
0
1
2
3
4
5
6
7
8
0.1
1
10
100
G
--
T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E
(
S
)
F
S
I -- DRAIN CURRENT (A)
D
T = 25C
C
T = 75C
C
V = 20V
DS
Drain Source Voltage
vs
Gate Source Voltage
Typical Transfer Characteristics
Typical Output Characteristics
Typical Output Characteristics
Forward Bias Safe Operating Area
Transconductance
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