PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE: BUZ50A
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain Source Voltage
VDSS
1000
Vdc
Drain Gate Voltage
VDGR
1000
Vdc
Drain Current Continuous
ID
2.5
Adc
Drain Current Pulsed
IDM
10
Adc
Gate Source Voltage
VGS
20
Vdc
Power Dissipation
PD
75
Watts
Inductive Current
IL
Adc
Operating and Storage Temperature
TJ & Tstg
-55 to +150
C
Lead Temperature From Case
TL
C
ELECTRICAL CHARACTERISTICS TA @ 25
C
Parameters
Symbol
Test Conditions
Min
Typ Max
Unit
Drain Source
Breakdown Voltage
BVDSS V
GS
= 0V, I
D
= .25mA
1000
Vdc
Gate Threshold Voltage
VGS(th) V
DS
= V
GS
, I
D
= 1.0mA
2.1
4.0
Vdc
Gate Body Leakage
Current
IGSS
V
GS
=
20V, V
DS
= 0V
100
nA
Zero Gate Voltage
Drain Current
IDSS
V
DS
= 1000V, V
GS
= 0V,
V
DS
= 1000V, V
GS
= 0V, T
J
= 125
C
0.25
1.0
mA
mA
On State Drain Current
ID(on)
Adc
Drain Source On-
Resistance
rDS(on) V
GS
= 10V, I
D
= 1.5A
5.0
Ohms
Forward
Transconductance
gFS
V
DS
= 25V, I
D
= 1.5A
0.7
mhos
Drain-Source On
Voltage
VDS(on)
Vdc
Drain-Source-On
Voltage
VDS(on)
Vdc
Input Capacitance
Ciss
2100 pF
Output Capacitance
Coss
120
pF
Reverse Transfer
Capacitance
Crss
V
GS
= 0V, V
DS
= 25V, f
= 1 MHz
50
pF
Page 1 of 2
TYPE:
BUZ50A
Drain Source Diode Characteristics
Symbol
Min
Typ
Max Units
Forward On Voltage
I
F
= 5.0A, V
GS
= 0V
VSD
1.3
Vdc
Reverse Recovery Time
trr
2000
ns
Reverse Recovery Charge
I
F
= 2.5A
di
F
/dt = 100A/
s, V
GS
= 0V
V
R
= 100V
Qrr
15
C
Total Gate Charge
Qg
nC
Gate Source Charge
Qgs
nC
Gate Drain Charge
Qgd
nC
Switching Characteristics
Symbol
Min
Typ
Max Units
Turn-On Time
ton
Turn-Off Time
toff
Delay Time (Turn On)
td(on)
45
ns
Rise Time
tr
60
ns
Delay Time (Turn Off)
td(off)
140
ns
Fall Time
V
DD
= 30V, I
D
= 2.0A
V
GS
= 10V, R
GS
= 50
Rgen = 50
tf
80
ns
Thermal Characteristics
Symbol
Units
Junction To Case
R
JC
C/W
Junction To Ambient
R
JA
C/W
Internal Package Inductance
Symbol
Typ
Max
Units
Internal Drain Inductance
Ld
4.5
nH
Internal Source Inductance
Ls
7.5
nH
Page 2 of 2
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