Page 1 of 5 http://www.rootech.com.cn
BTA12
MAIN FEATURES
Symbol
Value
Unit
I
T (RM S )
12
A
V
DRM
/V
RRM
600 and 800
V
I
G (Q
1
)
5 to 50
mA
DESCRIPTION
Suitable for AC switching operations, can be used as an
ON/OFF function in applications such as static relays,
heating regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances. By using an internal
ceramic pad, the BTA series provides voltage insulated
tab (rated at 2500V RMS) complying with UL standards.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Tc = 105
C
12
A
F = 50 Hz
t = 20 ms
120
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25
C)
F = 60 Hz
t = 16.7 ms
126
A
I
t
I
t Value for fusing
tp = 10 ms
78
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x
IGT
, tr
100 ns
F = 120 Hz
Tj = 125
C
50
A/
s
I
GM
Peak gate current
tp = 20
s
Tj = 125
C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125
C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
Page 2 of 5 http://www.rootech.com.cn
BTA12
ELECTRICAL CHARACTERISTICS (Tj = 25
C, unless otherwise specified)
n
SNUBBERLESS
TM
and LOGIC LEVEL (3 Quadrants)
Value
Symbol
Test Conditions
Quadrant
TW
SW
CW
BW
Unit
I
GT
(1)
I - II - III
MAX.
5
10
35
50
mA
V
GT
V
D
= 12 V
R
L
= 30 W
I - II - III
MAX.
1.3
V
V
GD
V
D
=
VDRM
R
L
= 3.3 kW
Tj = 125
C
I - II - III
MIN.
0.2
V
I
H
(2)
I
T
= 100 mA
MAX.
10
15
35
50
mA
I - III
10
25
50
70
I
L
I
G
= 1.2 I
GT
II
MAX.
15
30
60
80
mA
dV/dt (2)
V
D
= 67
%VDRM
gate open
Tj = 125
C
MIN.
20
40
500
1000
V/
s
(dV/dt)c = 0.1 V/
s Tj = 125
C
3.5
6.5
-
-
(dV/dt)c = 10 V/
s Tj = 125
C
1.0
2.9
-
-
(dI/dt)c (2)
Without snubber
Tj = 125
C
MIN.
-
-
6.5
12
A/ms
n
STANDARD (4 Quadrants)
Value
Symbol
Test Conditions
Quadrant
C
B
Unit
I
G
(1)
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
V
D
= 12 V R
L
= 30 W
ALL
MAX.
1.3
V
V
GD
V
D
=
VDRM
R
L
= 3.3 kW Tj = 125
C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 500 mA
MAX.
25
50
mA
I - III - IV
40
50
I
L
I
G
= 1.2 I
GT
II
MAX.
80
100
mA
dV/dt (2) V
D
= 67
%VDRM
gate open Tj = 125
C
MIN.
200
400
V/
s
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125
C
MIN.
5
10
V/
s
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
V
T
(2)
I
TM
= 5.5 A
tp = 380
s
Tj = 25
C
MAX.
1.55
V
V
to
(2)
Threshold voltage
Tj = 125
C
MAX.
0.85
V
R
d
(2)
Dynamic resistance
Tj = 125
C
MAX.
35
mW
Tj = 25
C
5
A
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 125
C
MAX.
1
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
2.3
C/W
R
th(j-a)
Junction to ambient
60
C/W
PDF 
ZIP
