PRELIMINARY
16Mbit CMOS SRAM
3DS16-325
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating
Fast Access Time : 15 or 20ns
Single 5.0 0.5V Power Supply
Power Dissipation
- Standby 80mA
- Operating 540mA (Max.)
TTL Compatible Inputs and Outputs
Fully Static Operation
- No clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Die Control : CS0#, CS1#, CS2# and
CS3# chip select
The 3DS16-325 is a 16,777,216 - bit high-speed Static Random Access
Memory organized as 4 banks of 262,144 words of 16 bits. Two
banks can operate silmultaneously, giving 32 bit processing.
The 3DS16-325 uses 32 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle.
Also it allows lower and upper byte access by data control
(UB#, LB#). The device is manufactured using 3D PLUS well
known MCM-V patended technology designed for high-speed circuit
applications. It is particularly well suited for use in high-density
high-speed system applications. The 3DS16-325 is packaged in
a 64-pin PQFP .
3D PLUS, 641 rue Hlne Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
3DFP-0012
Rev : 2
January 2000
Page 1/3
PIN CONFIGURATION
ELECTRONICS
BLOCK DIAGRAM
256k x 16 BIts
256k x 16 BIts
256k x 16 BIts
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
256k x 16 BIts
AO-17
WE
#
OE
#
UB
#
LB
#
I/O1-16
CSO
#
CS2
#
CS1
#
CS3
#
I/O17-32
Ao
A1
A2
A3
A4
CSO#
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
A17
A16
A15
OE#
UB#
LB#
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
I/O24
I/O23
I/O22
I/O21
I/O20
I/O28
I/O27
I/O26
I/O25
NC
CS2#
CS1#
CS3
#
I/O17
I/O18
I/O19
I/O29
I/O30
I/O31
I/O32
PQFP64
64
55
1
54
22
23
32
33
FEATURES
DESCRIPTION
3DS16-325S ( TOP VIEW )
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
AO-17
WE
#
OE
#
UB
#
LB
#
CS
#
I/O
PIN DESCRIPTION
A0-A17 Address Inputs
I/O1 - I/O32 Data Inputs / Outputs
LB#
Lower - Byte Control
CS0#, CS1#
CS2#, CS3#
WE# Write Enable
OE# Output Enable
Vcc 5.0 V Power
Vss Ground
NC No Connection
Chip Selects
UB# Upper - Byte Control
16Mbit CMOS SRAM
3SD16-325
3D PLUS, 641 rue Hlne Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
ELECTRONICS
3DFP-0012
Rev : 2
January 2000
Page 2/3
Symbol
Parameter
Val.
T
RAC
Read Cycle Time
15/20ns
Write Cycle Time
PRELIMINARY
V
V
V
V
RECOMMENDED DC OPERATING CONDITIONS (T
A
=0 to 70C)
Parameter
Symbol
Symbol
Parameter
Min
Typ
Max
Unit
Min
Max
Unit
Test Conditions
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
CC
4.5
0
2.2
-0.5
5.0
0
-
-
0.8
V
CC
+0.5
0
5.5
NOTE: The above parameters are also guaranteed at industrial temperature range.
DC AND OPERATING CHARACTERISTICS (T
A
=0 to 70C, V
CC
=5.0 0.5V, unless otherwise specified)
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
I
LI
I
LO
I
CC
V
IN
= V
SS
to V
CC
CS# = V
IH
or OE# = V
IH
or WE# = V
IL
V
OUT
= V
SS
to V
CC
Min. Cycle, 100% Duty
CS = V
IL
, V
IN
= V
IH
or V
IL
, I
OUT
= 0mA
-8
-8
8
8
A
A
15ns
20ns
530
540
mA
mA
mA
280
80
0.4
2.4
V
V
Min. Cycle, CS# = V
IH
I
SB
I
SB1
V
OL
V
OH
I
OL
= 8mA
I
OH
= -4mA
f = 0MHZ, CS#
= V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
Note: The above parameters are also guaranteed at industrial temperature range.
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Vss
Parameter
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Symbol
Industrial
Rating
Unit
V
IN
. V
OUT
V
cc
P
D
T
STG
T
A
T
A
C
W
V
V
C
C
-0.5 to +7.0
-0.5 to +7.0
-65 to 150
2.0
-40 to 85
0 to 70
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent to the
device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Max
CAPACITANCE*(T
A
= 25C, f = 1.0MHZ)
Item
Symbol
Test Conditions
Min
16
Unit
Input / Output Capacitance
Input / Capacitance
C
I/O
C
IN
V
IN
= 0V
V
I/O
= 0V
28
pF
-
-
pF
*NOTE : Capacitance is sampled and not 100% tested.
T
WC
15/20ns
DC OUTPUT CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Unit
HIGH Voltage
I
OH
= -4.0mA
I
OL
= 8.0mA
LOW Voltage
V
OL
V
OH
2.4
0.4
V
V
TRUTH TABLE
MODE
CS#
WE#
OE#
I/O Pin
Supply
Current
Not Selected
Not Selected
D
OUT
Disable
Read
Write
X
X
X
X
X
X
H
L
L
L
L
L
H
H
H
High-Z
Standby
Active
DOUT
High-Z
High-Z
Standby
DIN
Active
Active
H = HIGH
L = LOW
X = Don't Care
If OE is LOW during Write, tWHZ must be observed before data
is presented to the device.
16Mbit CMOS SRAM
3DS16-325
3D PLUS, 641 rue Hlne Boucher - ZI
F-78532 BUC Cedex FRANCE
Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89
Web : http://www. 3d-plus.com
ELECTRONICS
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice.
3D PLUS, 1999
C
3DFP-0012
Rev : 2
January 2000
Page 3/3
MAIN SALES OFFICE
France
3D PLUS
Tel : 33 (0)1 30 83 26 50
Fax : 33 (0)1 39 56 25 89
e-mail : sales@3d-plus.com
3DS16-325S
5199
D
D
1
E
e Typ.
A
E
1
15.80
16.20
10.80
11.20
0.80
27.80
28.20
Min
Max
Dimensions (mm)
7.15
22.80
23.20
7.75
D
D
1
E
e
A
E
1
3D S 16 - 32 5 (S) (C / I) - 15
I : Industrial temperature range (- 40C to +85C)
C : Commercial temperature range ( 0C to +70C)
PACKAGE
S : PQFP64
ACCESS TIME
-15 ns
-20 ns
32 bits WORD
SRAM
5.0V SUPPLY
3D PLUS
16 Mbits
3DS16-325SC-20 PQFP64
3DS16-325SI-20 PQFP64
3DS16-325SC-15 PQFP64
3DS16-325SI-15 PQFP64
Please contact 3D PLUS for more information about the available configurations.
ORDERING INFORMATION
MECHANICAL DRAWING
PRODUCT MARKING
- Trademark
- Part Number
- Date Code (ww,yy)
- Serial Number on request
PRELIMINARY
e
1
64 Places
e
1
0.30
PQFP
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