2SC1306
Silicon NPN Transistor
Final RF Power Output
Description:
The 2SC1306 is a silicon NPN transistor in a TO220 type
case designed for use in high power output amplifier
stages such as citizen band communications equipment.
WINTransceiver
B C E
Absolute Maximum Ratings: (T
C
= +25C unless otherwise specified)
Collector-Emitter Voltage (R
BE
= 150 Ohm), V
CER
75V
Collector-Base Voltage, V
CBO
80V
Emitter-Base Voltage, V
EBO
5V
Collector Current, I
C
Continuous
Peak
3A
5A
Collector Power Dissipation (T
A
= +25C), P
D
1.2W
Collector Power Dissipation (T
C
= +50C), P
D
10W
Operating Junction Temperature, T
J
+150C
Storage Temperature Range, T
stg
-55 to +150C
Electrical Characteristics: (T
C
= +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100A, I
B
= 0
80
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
C
= 1mA, R
BE
= 150 Ohm
75
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 100A, I
C
= 0
5
-
-
V
Collector Cutoff Current
I
CBO
V
CB
= 40V I
E
= 0
-
-
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
-
-
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 0.5A
25
-
200
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 0.1A
-
0.15
0.60
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 0.1A
-
0.9
1.2
V
Current Gain-Bandwidth Product
f
T
V
CE
= 10V, I
C
= 0.1A
100
150
-
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
25
-
-
Power Output
P
O
4.0
-
-
W
Collector Efficiency
V
CC
= 12V, P
in
= 0.2W, f = 27MHz
60
-
-
%
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