3.1 - 1
7 03 R0
100V Thru 500V, Up to 28A, N-Channel,
MOSFET Power Transistor, Repetitive Avalanche Rated
JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,
QUALIFIED TO MIL-PRF-19500/596
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
MECHANICAL OUTLINE
S C H E M ATIC
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
1
2
3
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
C
PA R T N U M B E R
V
DS,
Volts
R
DS(on)
I
D,
A m p s
2N7218
100
.070
28
2N7219
200 .18
18
2N7221
400
.55
10
2N7222
500
.85
8
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
F E AT U R E S
Repetitive Avalanche Rating
Isolated and Hermetically Sealed
Low R
DS(on)
Ease of Paralleling
Ceramic Feedthroughs
Qualified to MIL-PRF-19500
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is
ideally suited for Military requirements where small size, high performance and high reliability are required, and in
applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy
pulse circuits.
Parameter
Min.
Typ.
Max.
Units
Test Conditions
B V
D S S
Drain-Source
100
V
V
G S
= 0V, I
D
=1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
-
-
-
-
-
0.077
V
G S
= 10 V, I
D
= 20 A
3
On-State Resistance
-
-
-
-
-
-
0.125
V
G S
= 10 V, I
D
= 28 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
-
-
4.0
V
V
DS
= V
G S
,
I
D
= 250 A
I
D S S
Zero Gate Voltage Drain
-
-
-
-
-
-
25
A
V
D S
= 80 V, V
G S
= 0V
Current
-
-
-
-
-
-
250
V
D S
= 80 V, V
G S
= 0V, T
J
= 125C
I
G S S
Gate -to-Source Leakage Forward
-
-
-
-
-
-
100
nA
V
G S
= 20 V
I
G S S
Gate -to-Source Leakage Reverse
-
-
-
-
-
-
-100
nA
V
G S
= -20 V
Q
G(on)
On-state Gate Charge
-
-
-
-
-
-
59
nC
V
G S
= 10 V, I
D
= 28A
Q
G S
Gate-to-Source Charge
-
-
-
-
-
-
16
nC
V
D S
= 50 V
Q
G d
Gate-to-Drain ("Miller") Charge
-
-
-
-
-
-
30.7
nC
See note 4
t
D(on)
Turn-On Delay Time
-
-
-
-
-
-
21
ns
V
D D
= 50 V, I
D
= 20A, R
G
=9.1
t
r
Rise Time
-
-
-
-
-
-
105
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
-
-
-
-
-
64
ns
t
r
Fall Time
-
-
-
-
-
-
65
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
S D
Diode Forward Voltage
-
-
-
-
-
-
1.5
V
T
J
= 25C, I
S
= 28A
3
,
VG S = 0 V
t
t
r
r
Reverse Recovery Time
-
-
-
-
-
-
400
ns
T
J
= 25C, I
F
= 28A,di/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
-
-
-
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
-
-
0.21
-
-
-
C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
-
-
-
-
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 25V, Starting T
J
= 25C, L > 480 H, R
G
= 25 , Peak I
L
= 28A
3. Pulse width < 300 s; Duty Cycle < 2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7218
Units
I
D
@ V
GS
= 10V, T
C
= 25C
Continuous Drain Current
28
A
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current
20
A
I
D M
Pulsed Drain Current
1
112
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/C
V
G S
Gate-Source Voltage
20
V
E
A S
Single Pulse Avalanche Energy
2
250
4
m J
I
A R
Avalanche Current
1
28
4
A
E
A R
Repetitive Avalanche Energy
1
12.5
4
m J
T
J
Operating Junction
-55 to 150
C
T
S T G
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
C
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
Parameter
Min.
Typ.
Max.
Units
Test Conditions
B V
D S S
Drain-Source
200
V
V
G S
= 0V, I
D
=1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
-
-
-
-
-
0.18
V
G S
= 10 V, I
D
= 11 A
3
On-State Resistance
-
-
-
-
-
-
0.25
V
G S
= 10 V, I
D
= 18 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
-
-
4.0
V
V
DS
= V
G S
,
I
D
= 250 A
I
D S S
Zero Gate Voltage Drain
-
-
-
-
-
-
25
A
V
D S
= 160 V, V
G S
= 0V
Current
-
-
-
-
-
-
250
V
D S
= 160 V, V
G S
= 0V, T
J
= 125C
I
G S S
Gate -to-Source Leakage Forward
-
-
-
-
-
-
100
nA
V
G S
= 20 V
I
G S S
Gate -to-Source Leakage Reverse
-
-
-
-
-
-
-100
nA
V
G S
= -20 V
Q
G(on)
On-state Gate Charge
-
-
-
-
-
-
60
nC
V
G S
= 10 V, I
D
= 18A
Q
G S
Gate-to-Source Charge
-
-
-
-
-
-
10.6
nC
V
D S
= 100 V
Q
G d
Gate-to-Drain ("Miller") Charge
-
-
-
-
-
-
37.6
nC
See note 4
t
D(on)
Turn-On Delay Time
-
-
-
-
-
-
20
ns
V
D D
= 100 V, I
D
= 11A, R
G
=9.1
t
r
Rise Time
-
-
-
-
-
-
105
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
-
-
-
-
-
58
ns
t
r
Fall Time
-
-
-
-
-
-
67
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
S D
Diode Forward Voltage
-
-
-
-
-
-
1.5
V
T
J
= 25C, I
S
= 18A
3
,
VG S = 0 V
t
t
r
r
Reverse Recovery Time
-
-
-
-
-
-
500
ns
T
J
= 25C, I
F
= 18A,di/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
-
-
-
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
-
-
0.21
-
-
-
C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
-
-
-
-
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 50V, Starting T
J
= 25C, L > 2.1 mH, R
G
= 25 , Peak I
L
= 18A
3. Pulse width < 300 s; Duty Cycle < 2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7219
Units
I
D
@ V
GS
= 10V, T
C
= 25C
Continuous Drain Current
18
A
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current
11
A
I
D M
Pulsed Drain Current
1
72
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/C
V
G S
Gate-Source Voltage
20
V
E
A S
Single Pulse Avalanche Energy
2
450
4
m J
I
A R
Avalanche Current
1
18
4
A
E
A R
Repetitive Avalanche Energy
1
12.5
4
m J
T
J
Operating Junction
-55 to 150
C
T
S T G
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
C
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
Parameter
Min.
Typ.
Max.
Units
Test Conditions
B V
D S S
Drain-Source
400
V
V
G S
= 0V, I
D
=1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
-
-
-
-
-
0.55
V
G S
= 10 V, I
D
= 6.0 A
3
On-State Resistance
-
-
-
-
-
-
0.70
V
G S
= 10 V, I
D
= 10 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
-
-
4.0
V
V
DS
= V
G S
,
I
D
= 250 A
I
D S S
Zero Gate Voltage Drain
-
-
-
-
-
-
25
A
V
D S
= 320 V, V
G S
= 0V
Current
-
-
-
-
-
-
250
V
D S
= 320 V, V
G S
= 0V, T
J
= 125C
I
G S S
Gate -to-Source Leakage Forward
-
-
-
-
-
-
100
nA
V
G S
= 20 V
I
G S S
Gate -to-Source Leakage Reverse
-
-
-
-
-
-
-100
nA
V
G S
= -20 V
Q
G(on)
On-state Gate Charge
-
-
-
-
-
-
65
nC
V
G S
= 10 V, I
D
= 10A
Q
G S
Gate-to-Source Charge
-
-
-
-
-
-
10
nC
V
D S
= 200 V
Q
G d
Gate-to-Drain ("Miller") Charge
-
-
-
-
-
-
40.5
nC
See note 4
t
D(on)
Turn-On Delay Time
-
-
-
-
-
-
25
ns
V
D D
= 200 V, I
D
= 6A, R
G
= 9.1
t
r
Rise Time
-
-
-
-
-
-
92
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
-
-
-
-
-
79
ns
t
r
Fall Time
-
-
-
-
-
-
58
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
S D
Diode Forward Voltage
-
-
-
-
-
-
1.5
V
T
J
= 25C, I
S
= 10A
3
,
VG S = 0 V
t
t
r
r
Reverse Recovery Time
-
-
-
-
-
-
600
ns
T
J
= 25C, I
F
= 10A,di/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
-
-
-
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
-
-
0.21
-
-
-
C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
-
-
-
-
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 50V, Starting T
J
= 25C, L > 11.4 mH, R
G
= 25 , Peak I
L
= 10A
3. Pulse width < 300 s; Duty Cycle < 2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7221
Units
I
D
@ V
GS
= 10V, T
C
= 25C
Continuous Drain Current
10
A
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current
6.0
A
I
D M
Pulsed Drain Current
1
40
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/C
V
G S
Gate-Source Voltage
20
V
E
A S
Single Pulse Avalanche Energy
2
650
4
m J
I
A R
Avalanche Current
1
10
4
A
E
A R
Repetitive Avalanche Energy
1
12.5
4
m J
T
J
Operating Junction
-55 to 150
C
T
S T G
Storage Temperature Range
Lead Temperature
300 (.06 from case for 10 sec)
C
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
Parameter
Min.
Typ.
Max.
Units
Test Conditions
B V
D S S
Drain-Source
500
V
V
G S
= 0V, I
D
=1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
-
-
-
-
-
0.85
V
G S
= 10 V, I
D
= 5.0 A
3
On-State Resistance
-
-
-
-
-
-
0.95
V
G S
= 10 V, I
D
= 8.0 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
-
-
4.0
V
V
DS
= V
G S
,
I
D
= 250 A
I
D S S
Zero Gate Voltage Drain
-
-
-
-
-
-
25
A
V
D S
= 400 V, V
G S
= 0V
Current
-
-
-
-
-
-
250
V
D S
= 400 V, V
G S
= 0V, T
J
= 125C
I
G S S
Gate -to-Source Leakage Forward
-
-
-
-
-
-
100
nA
V
G S
= 20 V
I
G S S
Gate -to-Source Leakage Reverse
-
-
-
-
-
-
-100
nA
V
G S
= -20 V
Q
G(on)
On-state Gate Charge
-
-
-
-
-
-
68.5
nC
V
G S
= 10 V, I
D
= 8.0A
Q
G S
Gate-to-Source Charge
-
-
-
-
-
-
12.5
nC
V
D S
= 250 V
Q
G d
Gate-to-Drain ("Miller") Charge
-
-
-
-
-
-
42.4
nC
See note 4
t
D(on)
Turn-On Delay Time
-
-
-
-
-
-
21
ns
V
D D
= 250 V, I
D
= 5.0A, R
G
= 9.1
t
r
Rise Time
-
-
-
-
-
-
73
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
-
-
-
-
-
72
ns
t
r
Fall Time
-
-
-
-
-
-
51
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
S D
Diode Forward Voltage
-
-
-
-
-
-
1.5
V
T
J
= 25C, I
S
= 8.0A
3
,
VG S = 0 V
t
t
r
r
Reverse Recovery Time
-
-
-
-
-
-
700
ns
T
J
= 25C, I
F
= 8.0A,di/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
-
-
-
-
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
-
-
0.21
-
-
-
C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
-
-
-
-
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @V
D D
= 50V, Starting T
J
= 25C, L > 20 mH, R
G
= 25 , Peak I
L
= 8A
3. Pulse width < 300 s; Duty Cycle < 2 %
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7222
Units
I
D
@ V
GS
= 10V, T
C
= 25C
Continuous Drain Current
8.0
A
I
D
@ V
GS
= 10V, T
C
= 100C Continuous Drain Current
5.0
A
I
D M
Pulsed Drain Current
1
32
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/C
V
G S
Gate-Source Voltage
20
V
E
A S
Single Pulse Avalanche Energy
2
700
4
m J
I
A R
Avalanche Current
1
8.0
4
A
E
A R
Repetitive Avalanche Energy
1
12.5
4
m J
T
J
Operating Junction
-55 to 150
C
T
S T G
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
C
ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
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